Datasheet > 10-F006PPA020SB02-M685B3

10-F006PPA020SB02-M685B3

更新时间： 2023-09-03 20:25:05

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	12427K
描述
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching

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10-F006PPA020SB02-M685B3 数据手册

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10-F006PPA020SB02-M685B30

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

PFC Sw. Inverse Diode

Static

1,23

1,72

1,58

1,54

1,87⁽¹⁾

V_F

I_R

Forward voltage

125

150

Reverse leakage current

V_r= 650 V

0,1

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,65

K/W

Rectifier Diode

Static

0,996

0,907

1,21⁽¹⁾

1,1⁽¹⁾

V_F

I_R

Forward voltage

125

Reverse leakage current

V_r= 1600 V

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,59

K/W

PFC Shunt

Static

Resistance

6,8

mΩ

Tolerance

-1

Temperature coeficient

100

ppm/K

15 Sep. 2021 / Revision 2

1...6 7 8910 11 12...32

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