Datasheet > 10-F106NIA150SA-M136F

10-F106NIA150SA-M136F

更新时间： 2023-09-03 20:33:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
27页	3292K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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10-F106NIA150SA-M136F

flowNPC 1

600V/150A

Features

flow1 housing

● Neutral-point-Clamped inverter

● Compact flow1 housing

● Low Inductance Layout

Target Applications

Schematic

● UPS

● Motor Drive

● Solar inverters

Types

● 10-F106NIA150SA-M136F

Maximum Ratings

Tj=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Buck IGBT

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

600

T_h=80°C

T_c=80°C

109

144

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Pulsed collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

450

T_h=80°C

T_c=80°C

166

251

V_GE

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

360

T_jmax

Maximum Junction Temperature

Turn off safe operating area

175

300

°C

T_j≤150°C

V_CE<=V_CES

Buck Diode

T_j=25°C

V_RRM

I_F

I_FRM

P_tot

Peak Repetitive Reverse Voltage

DC forward current

600

T_h=80°C

T_c=80°C

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

T_c=100°C

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

450

T_h=80°C

T_c=80°C

°C

112

T_jmax

175

Revision: 5

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