Datasheet > 10-F0062PA150SA01-P995F19

10-F0062PA150SA01-P995F19

更新时间： 2024-11-25 19:00:03

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
15页	381K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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10-F0062PA150SA01-P995F19 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

10-F0062PA150SA01-P995F19 数据手册

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FZ06 / F0062PA150SA01

preliminary datasheet

flowPHASE0

600V/150A

Features

flow0 housing

● Trench Fieldstop IGBT³technology

● 2-clip housing in 12mm and 17mm height

● Compact and low inductance design

● AlN substrate for improved performance

Target Applications

Schematic

● Motor Drive

● UPS

Types

● FZ062PA150SA01

● F0062PA150SA01

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Inverter Transistor

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

600

T_h=80°C

T_c=80°C

142

183

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

450

T_h=80°C

T_c=80°C

264

400

V_GE

±20

t_SC

T_j≤150°C

μs

V_CC

V_GE=15V

360

T_jmax

Maximum Junction Temperature

175

°C

Inverter Diode

T_j=25°C

V_RRM

I_F

I_FRM

P_tot

Peak Repetitive Reverse Voltage

DC forward current

600

T_h=80°C

T_c=80°C

120

150

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

450

T_h=80°C

T_c=80°C

174

264

°C

T_jmax

175

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