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10-EZ122PB032ME-PE07F18T

更新时间： 2023-09-03 20:32:16
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VINCOTECH /
页数 文件大小 规格书
17页 6918K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EZ122PB032ME-PE07F18T 数据手册

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10-EZ122PB032ME-PE07F18T  
datasheet  
Inverter Switching Characteristics  
figure 7.  
MOSFET  
figure 8.  
MOSFET  
Typical switching energy losses as a function of drain current  
Typical switching energy losses as a function of MOSFET turn on gate resistor  
E = f(ID)  
E = f(Rg)  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
10  
20  
30  
40  
50  
60  
70  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
ID(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VDS  
VGS  
=
=
=
=
VDS  
VGS  
ID  
=
=
=
600  
-4/15  
4
V
V
125 °C  
150 °C  
600  
-4/15  
32  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
Ω
Ω
4
figure 9.  
MOSFET  
figure 10.  
MOSFET  
Typical reverse recovered energy loss as a function of drain current  
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor  
Erec = f(ID)  
Erec = f(Rg)  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
70  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
ID(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
600  
-4/15  
4
V
125 °C  
150 °C  
600  
-4/15  
32  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
V
A
Rgon  
Ω
Copyright Vincotech  
9
07 Jul. 2022 / Revision 1  
1...6789101112...17

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