Datasheet > 10-EZ122PB032ME-PE07F18T

10-EZ122PB032ME-PE07F18T

更新时间： 2023-09-03 20:32:16

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6918K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EZ122PB032ME-PE07F18T

datasheet

Inverter Switching Characteristics

figure 15.

MOSFET

figure 16.

MOSFET

Typical recovered charge as a function of drain current

Typical recovered charge as a function of MOSFET turn on gate resistor

Q_r= f(I_D)

Q_r= f(R_gon)

1,50

1,25

1,00

0,75

0,50

0,25

0,00

1,2

1,0

0,8

0,6

0,4

0,2

0,0

Q_r

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_D(A)

R_gon(Ω)

V_DS

V_GS

V_DS

V_GS

I_D

600

-4/15

600

-4/15

25 °C

125 °C

150 °C

125 °C

150 °C

T_j:

R_gon

figure 17.

MOSFET

figure 18.

MOSFET

Typical peak reverse recovery current as a function of drain current

Typical peak reverse recovery current as a function of MOSFET turn on gate resistor

I_RM= f(I_D)

I_RM= f(R_gon)

125

100

150

125

100

I_RM

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_D(A)

R_gon(Ω)

V_DS

V_GS

V_DS

V_GS

I_D

600

-4/15

600

-4/15

25 °C

125 °C

150 °C

125 °C

150 °C

T_j:

R_gon

07 Jul. 2022 / Revision 1

1...8 9 101112 13 14...17

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