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10-EZ122PB032ME-PE07F18T

更新时间： 2023-09-03 20:32:16
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
17页 6918K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EZ122PB032ME-PE07F18T 数据手册

 浏览型号10-EZ122PB032ME-PE07F18T的Datasheet PDF文件第2页浏览型号10-EZ122PB032ME-PE07F18T的Datasheet PDF文件第3页浏览型号10-EZ122PB032ME-PE07F18T的Datasheet PDF文件第4页浏览型号10-EZ122PB032ME-PE07F18T的Datasheet PDF文件第5页浏览型号10-EZ122PB032ME-PE07F18T的Datasheet PDF文件第6页浏览型号10-EZ122PB032ME-PE07F18T的Datasheet PDF文件第7页 
10-EZ122PB032ME-PE07F18T  
datasheet  
flowDUAL E1 SiC  
1200 V / 32 mΩ  
Topology features  
flow E1 12 mm housing  
● Temperature sensor  
● Half Bridge  
Component features  
● High Blocking Voltage with low drain source on state resistance  
● High speed SiC-MOSFET technology  
● Resistant to Latch-up  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Compact housing  
● CTI600 housing material  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
● Reliable cold welding connection  
Schematic  
Extra features  
● equivalent: FF45MR12W1M1_B11  
Target applications  
● Charging Stations  
● General  
● Servo Drives  
● UPS  
Types  
● 10-EZ122PB032ME-PE07F18T  
Copyright Vincotech  
1
07 Jul. 2022 / Revision 1  
1234567...17

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