Datasheet > 10-EY126PA100M7-L198F78T

10-EY126PA100M7-L198F78T

更新时间： 2023-09-03 20:25:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	3562K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-EY126PA100M7-L198F78T 数据手册

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10-EY126PA100M7-L198F78T

10-E2126PA100M7-L198F78Z

datasheet

Inverter Switching Characteristics

figure 13.

FWD

figure 14.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor

di _F/dt, di _rr/dt = f(I _C

)

di _F/dt, di _rr/dt = f(R _gon)

16000

12000

di_F/dt

di_rr/dt

di_F/dt

di_{r r}/dt

12000

8000

4000

9000

6000

3000

R_gon(Ω)

600

100

120

140

160

180

200

I_C(A)

V_CE

25 °C

125 °C

150 °C

V_CE

V_GE

I _C

600

±15

100

25 °C

V_GE

±15

125 °C

T_j:

R _gon

150 °C

figure 15.

IGBT

Reverse bias safe operating area

I _C= f(V_CE

)

250

I_{C MAX}

200

150

100

200

400

600

800

1000

1200

1400

V_{C E}(V)

T_j=

125

°C

R _gon

R _goff

27 May. 2019 / Revision 5

1...8 9 101112 13 14...16

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