Datasheet > 10-EY124PA011ME-LP40F18T

10-EY124PA011ME-LP40F18T

更新时间： 2023-09-03 20:35:53

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	5490K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY124PA011ME-LP40F18T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Dynamic

39,13

33,97

33,58

26,39

21,91

20,74

89,51

96,81

99,11

16,16

17,24

18,43

1,5

t_d(on)

Turn-on delay time

125

150

t_r

t_d(off)

t_f

Rise time

125

150

R_gon= 4 Ω

R_goff= 4 Ω

Turn-off delay time

125

150

Fall time

125

150

Q_rFWD=0,606 µC

Q_rFWD=1,36 µC

Q_rFWD=1,63 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

Peak recovery current

Reverse recovery time

Recovered charge

125

150

1,6

mWs

1,64

0,65

E_off

-4/15

600

125

150

0,623

0,606

48,48

75,65

85,62

21,28

28,72

30,58

0,606

1,36

I_RRM

125

150

t_rr

125

150

di/dt=4201 A/µs

di/dt=4595 A/µs

di/dt=4798 A/µs

Q_r

125

150

μC

1,63

0,121

0,381

0,486

6995,73

9639,8

14285,39

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

(di_rf/dt)_max

125

150

04 Nov. 2021 / Revision 1

1 2 345 6 7...17

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