Datasheet > 06035J3R1BBSTR

06035J3R1BBSTR

更新时间： 2024-10-30 19:10:39

品牌	Logo	应用领域
京瓷/艾维克斯 - KYOCERA AVX		电容器
页数	文件大小	规格书
25页	1788K
描述
Film Capacitor, Silicon Dioxide And Nitride, 50V, 3.2258% +Tol, 3.2258% -Tol, -/+30ppm/Cel TC, 0.0000031uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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06035J3R1BBSTR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	, 0603
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8532.25.00.45	风险等级：	5.66
电容：	0.0000031 µF	电容器类型：	FILM CAPACITOR
介电材料：	SILICON DIOXIDE AND OXYNITRIDE	高度：	0.63 mm
JESD-609代码：	e3	长度：	1.6 mm
安装特点：	SURFACE MOUNT	负容差：	3.23%
端子数量：	2	最高工作温度：	125 °C
最低工作温度：	-55 °C	封装形状：	RECTANGULAR PACKAGE
封装形式：	SMT	包装方法：	TR, 7/13 INCH
正容差：	3.23%	额定（直流）电压（URdc）：	50 V
参考标准：	AEC-Q200	尺寸代码：	0603
表面贴装：	YES	温度系数：	30ppm/Cel ppm/ °C
端子面层：	Tin (Sn) - with Nickel (Ni) barrier	端子形状：	WRAPAROUND
宽度：	0.81 mm	Base Number Matches：	1

06035J3R1BBSTR 数据手册

Thin-Film RF/Microwave Capacitor Technology

Accu-P^®Series

Thin-Film Technology

THE IDEAL CAPACITOR

THIN-FILM TECHNOLOGY

The non-ideal characteristics of a real capacitor can be ignored at low

frequencies. Physical size imparts inductance to the capacitor and

dielectric and metal electrodes result in resistive losses, but these often

are of negligible effect on the circuit. At the very high frequencies of radio

communication (>100MHz) and satellite systems (>1GHz), these effects

become important. Recognizing that a real capacitor will exhibit inductive

and resistive impedances in addition to capacitance, the ideal capacitor for

these high frequencies is an ultra low loss component which can be fully

characterized in all parameters with total repeatability from unit to unit.

Thin-ﬁlm technology is commonly used in producing semiconductor devices.

In the last two decades, this technology has developed tremendously, both

in performance and in process control. Today’s techniques enable line

deﬁnitions of below 1μm, and the controlling of thickness of layers at 100Å

(10-2μm). Applying this technology to the manufacture of capacitors has

enabled the development of components where both electrical and physical

properties can be tightly controlled.

The thin-ﬁlm production facilities at AVX consist of:

•

Class 1000 clean rooms, with working areas under laminar-ﬂow hoods

of class 100, (below 100 particles per cubic foot larger than 0.5μm).

High vacuum metal deposition systems for high-purity

electrode construction.

Photolithography equipment for line deﬁnition down to 2.0μm

accuracy.

Plasma-enhanced CVD for various dielectric depositions

(CVD=Chemical Vapor Deposition).

High accuracy, microprocessor-controlled dicing saws for

chip separation.

High speed, high accuracy sorting to ensure strict tolerance adherence.

Until recently, most high frequency/microwave capacitors were based on

ﬁred-ceramic (porcelain) technology. Layers of ceramic dielectric material

and metal alloy electrode paste are interleaved and then sintered in a

high temperature oven. This technology exhibits component variability in

dielectric quality (losses, dielectric constant and insulation resistance),

variability in electrode conductivity and variability in physical size (affecting

inductance). An alternate thin-ﬁlm technology has been developed which

virtually eliminates these variances. It is this technology which has been fully

incorporated into Accu-P^®and Accu-P^®to provide high frequency capacitors

exhibiting truly ideal characteristics.

The main features of Accu-P^®may be summarized as follows:

•

High purity of electrodes for very low and repeatable ESR.

Highly pure, low-K dielectric for high breakdown ﬁeld, high insulation

resistance and low losses to frequencies above 40GHz.

Very tight dimensional control for uniform inductance, unit to unit.

Very tight capacitance tolerances for high frequency signal

applications.

•

This accuracy sets apart these Thin-Film capacitors from ceramic capacitors

so that the term Accu has been employed as the designation for this series

of devices, an abbreviation for “accurate.”

Orientation Marking

Alumina (Al₂O₃)

Electrode

Seal

(SiNO)

Dielectric (SiO₂/ SiNO)

Electrode

Alumina (Al₂O₃)

Terminations

ACCU-P^®CAPACITOR STRUCTURE

The Important Information/Disclaimer is incorporated in the catalog where these speciﬁcations came from or

available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.

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与06035J3R1BBSTR相关器件

型号	品牌	获取价格	描述	数据表
06035J3R1BBSTR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R1C4STR	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R1C4STR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R1CBSTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 8.0645% +Tol, 8.0645% -Tol, -/+30ppm/Cel
06035J3R1CBSTR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R2A4STR	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R2A4STR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R2ABSTR	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R2ABSTR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R2B4STR	KYOCERA AVX	获取价格	Thin Film Capacitor

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