Datasheet > 06035J3R3ABSTR

06035J3R3ABSTR

更新时间： 2024-10-30 18:20:39

品牌	Logo	应用领域
京瓷/艾维克斯 - KYOCERA AVX		电容器
页数	文件大小	规格书
25页	1245K
描述
Film Capacitor, Silicon Dioxide And Nitride, 50V, 1.5152% +Tol, 1.5152% -Tol, -/+30ppm/Cel TC, 0.0000033uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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06035J3R3ABSTR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	, 0603
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8532.25.00.45	Factory Lead Time：	14 weeks
风险等级：	1.57	电容：	0.0000033 µF
电容器类型：	FILM CAPACITOR	介电材料：	SILICON DIOXIDE AND OXYNITRIDE
高度：	0.63 mm	JESD-609代码：	e3
长度：	1.6 mm	安装特点：	SURFACE MOUNT
负容差：	1.52%	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-55 °C
封装形式：	SMT	包装方法：	TR, 7/13 INCH
正容差：	1.52%	额定（直流）电压（URdc）：	50 V
参考标准：	AEC-Q200	尺寸代码：	0603
表面贴装：	YES	温度系数：	30ppm/Cel ppm/ °C
端子面层：	Tin (Sn) - with Nickel (Ni) barrier	端子形状：	WRAPAROUND
宽度：	0.81 mm	Base Number Matches：	1

06035J3R3ABSTR 数据手册

Accu-P

Thin-Film Technology

This accuracy sets apart these Thin-Film capacitors from

ceramic capacitors so that the term Accu has been

employed as the designation for this series of devices, an

abbreviation for “accurate.”

THE IDEAL CAPACITOR

The non-ideal characteristics of a real capacitor can be

ignored at low frequencies. Physical size imparts inductance

to the capacitor and dielectric and metal electrodes result in

resistive losses, but these often are of negligible effect on the

circuit. At the very high frequencies of radio communication

(>100MHz) and satellite systems (>1GHz), these effects

become important. Recognizing that a real capacitor will

exhibit inductive and resistive impedances in addition to

capacitance, the ideal capacitor for these high frequencies is

an ultra low loss component which can be fully characterized

in all parameters with total repeatability from unit to unit.

THIN-FILM TECHNOLOGY

Thin-film technology is commonly used in producing semi-

conductor devices. In the last two decades, this technology

has developed tremendously, both in performance and in

process control. Today’s techniques enable line definitions of

below 1μm, and the controlling of thickness of layers at 100Å

(10^-2μm). Applying this technology to the manufacture of

capacitors has enabled the development of components

where both electrical and physical properties can be tightly

controlled.

Until recently, most high frequency/microwave capacitors

were based on fired-ceramic (porcelain) technology. Layers

of ceramic dielectric material and metal alloy electrode paste

are interleaved and then sintered in a high temperature oven.

This technology exhibits component variability in dielectric

quality (losses, dielectric constant and insulation resistance),

variability in electrode conductivity and variability in physical

size (affecting inductance). An alternate thin-film technology

has been developed which virtually eliminates these vari-

ances. It is this technology which has been fully incorporated

into Accu-P^®and Accu-P^®to provide high frequency capaci-

tors exhibiting truly ideal characteristics.

The thin-film production facilities at AVX consist of:

• Class 1000 clean rooms, with working areas under

laminar-flow hoods of class 100, (below 100 particles

per cubic foot larger than 0.5μm).

• High vacuum metal deposition systems for high-purity

electrode construction.

• Photolithography equipment for line definition down to

2.0μm accuracy.

The main features of Accu-P^®may be summarized as follows:

• Plasma-enhanced CVD for various dielectric deposi-

tions (CVD=Chemical Vapor Deposition).

• High purity of electrodes for very low and repeatable

ESR.

• High accuracy, microprocessor-controlled dicing saws

for chip separation.

• Highly pure, low-K dielectric for high breakdown field,

high insulation resistance and low losses to frequencies

above 40GHz.

• High speed, high accuracy sorting to ensure strict

tolerance adherence.

• Very tight dimensional control for uniform inductance,

unit to unit.

• Very tight capacitance tolerances for high frequency

signal applications.

Orientation Marking

Electrode

Alumina (Al₂O₃)

Seal

(SiNO)

Dielectric (SiO₂/ SiNO)

Electrode

Alumina (Al₂O₃)

Terminations

ACCU-P^®CAPACITOR STRUCTURE

050118

12 3 4 5 6 7...25

中文翻译

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与06035J3R3ABSTR相关器件

型号	品牌	获取价格	描述	数据表
06035J3R3ABSTR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R3B4STR	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R3B4STR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R3BBSTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 3.0303% +Tol, 3.0303% -Tol, -/+30ppm/Cel
06035J3R3BBSTR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R3BBTTR	KYOCERA AVX	获取价格	Accu-F Accu-P Thin-Film RF/Microwave Capacitors
06035J3R3C4STR	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R3C4STR\500	KYOCERA AVX	获取价格	Thin Film Capacitor
06035J3R3CBSTR	KYOCERA AVX	获取价格	Film Capacitor, Silicon Dioxide And Nitride, 50V, 7.5758% +Tol, 7.5758% -Tol, -/+30ppm/Cel
06035J3R3CBSTR\500	KYOCERA AVX	获取价格	Thin Film Capacitor

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