5秒后页面跳转
05N5817-T PDF预览

05N5817-T

更新时间: 2024-10-30 18:48:03
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
5页 77K
描述
Rectifier Diode, Schottky, 1 Element, 0.5A, 20V V(RRM), Silicon, DO-41,

05N5817-T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.24
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:20 V表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

05N5817-T 数据手册

 浏览型号05N5817-T的Datasheet PDF文件第2页浏览型号05N5817-T的Datasheet PDF文件第3页浏览型号05N5817-T的Datasheet PDF文件第4页浏览型号05N5817-T的Datasheet PDF文件第5页 
05N5817  
THRU  
05N5819  
LOW Vf SCHOTTKY BARRIER RECTIFIER  
VOLTAGE RANGE 20 to 40 Volts CURRENT 0.5 Ampere  
FEATURES  
* Low switching noise  
* Low forward voltage drop  
* High current capability  
* High switching capability  
* High surge capabitity  
* High reliability  
DO-41  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.034 (0.9)  
.028 (0.7)  
DIA.  
1.0 (25.4)  
MIN.  
* Weight: 0.33 gram  
.205 (5.2)  
.166 (4.2)  
.107 (2.7)  
.080 (2.0)  
DIA.  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
SYMBOL  
05N5817  
05N5818  
UNITS  
Volts  
Volts  
Volts  
RATINGS  
05N5819  
V
20  
14  
20  
30  
21  
30  
40  
28  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
V
RMS  
V
DC  
40  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
I
0.5  
Amps  
O
O
at T =100 C  
A
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
I2T  
60  
14.9  
50  
Amps  
A2S  
Typical Current Squared Time  
R
θJA  
0 C/W  
Typical Thermal Resistance (Note 3)  
R
θJL  
15  
110  
150  
C
J
Typical Junction Capacitance (Note 1)  
Operating Temperature Range  
Storage Temperature Range  
pF  
0 C  
0 C  
T
J
T
-55 to + 150  
STG  
O
ELECTRICAL CHARACTERISTICS(@T  
A
=25 C unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
UNITS  
Volts  
05N5817  
05N5818  
.30  
05N5819  
Maximum Instantaneous Forward Voltage at 0.5A DC  
V
F
@T = 25oC  
Maximum Average Reverse Current  
at Rated DC Blocking Voltage  
A
1.0  
10  
mAmps  
mAmps  
I
R
@T = 100oC  
A
NOTES : 1. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.  
2010-05  
REV: O  
3. Thermal Resistance : At 9.5mm lead lengths, PCB mounted.  
4. Available in Halogen-free epoxy by adding suffix -HF after the part nbr.  

与05N5817-T相关器件

型号 品牌 获取价格 描述 数据表
05N5818 RECTRON

获取价格

LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 0.5 Ampere
05N5818-B RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-41,
05N5818-E RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-41,
05N5818-HF-E RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-41,
05N5818-HF-F RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-41,
05N5818-HF-T RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-41,
05N5818-T RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-41,
05N5819 RECTRON

获取价格

LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 0.5 Ampere
05N5819-E RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, DO-41,
05N5819-F RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, DO-41,