Datasheet > 0402CS-5N6XJL

0402CS-5N6XJL

更新时间： 2024-09-18 01:21:15

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页数	文件大小	规格书
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描述
Edge QAM Gain Stage

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0402CS-5N6XJL 数据手册

TAT7472A1F

CATV 75 Ω pHEMT Dual RF Amplifier

Applications

 Edge QAM Gain Stage

 MDU Output

 RF Distribution Amplifiers

 AH22 Replacement

SOIC-8 Package

Product Features

Functional Block Diagram

Pin 1 Reference Mark

 75 Ω, 50 MHz to 1218 MHz Bandwidth

 Low Noise Figure: <ꢀ3ꢀdB

 pHEMT Device Technology

 SOIC-8 Package

 Enhanced Gain and Bandwidth

 Adjustable Bias

RF_IN/ V_G

RF_OUT/ V_DDA

N/C

GND

N/C

GND

N/C

GND

N/C

RF_IN/ V_G

RF_OUT/ V_DDB

Backside Pad - RF/DC GND

General Description

Pin Configuration

The TAT7472A1F is a 75 Ω RF Amplifier designed for

CATV use, but capable of operation up to 1218ꢀMHz.

The TAT7472 A1F contains two separate amplifiers for

push pull applications. It is fabricated using 6-inch GaAs

pHEMT technology to optimize performance and cost.

Each amplifier contains on-chip active biasing. The bias

current set point of each amplifier is adjustable with a

single resistor from the input to ground.

Pin No.

Label

RF_INꢁ/ꢁV_GA

2, 3, 6, 7

GND

RF_IN/ꢁV_GB

RF_OUTꢁ/ꢁV_DD

Backside Pad

RF/DC GND

Typical supply voltage is +5ꢀV, IMD performance and

bandwidth can be enhanced with +5.5ꢀV and +6ꢀV

operation.

Ordering Information

Part No.

Description

TAT7472A1F

75ꢀΩ Dual pHEMT Amplifier

TAT7472A1F-EB 50ꢀ–ꢀ1218ꢀMHz Evaluation Board

Standard T/R size = 1000 pieces on a 7” reel.

Datasheet: Rev D 06-08-15

Disclaimer: Subject to change without notice

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