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ZXTP2027FTA PDF预览

ZXTP2027FTA

更新时间: 2024-11-29 07:42:23
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
8页 428K
描述
60V, SOT23, PNP medium power transistor

ZXTP2027FTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.33最大集电极电流 (IC):4 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1.56 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):165 MHzBase Number Matches:1

ZXTP2027FTA 数据手册

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ZXTP2027F  
60V, SOT23, PNP medium power transistor  
Summary  
V
> -100V, V  
> -60V  
(BR)CEO  
(BR)CEV  
I
= -4A  
C(cont)  
R
= 31 mtypical  
CE(sat)  
V
< -60 mV @ -1A  
CE(sat)  
P = 1.2W  
D
Complementary part number ZXTN2018F  
Description  
C
E
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally suited  
to applications where space is at a premium.  
B
Features  
Higher power dissipation SOT23 package  
High peak current  
Low saturation voltage  
100V forward blocking voltage  
E
B
Applications  
MOSFET and IGBT gate driving  
Motor drive  
C
Relay, lamp and solenoid drive  
High side switches  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
Quantity per reel  
ZXTP2027FTA  
7
8mm  
3,000  
Device marking  
951  
Issue 3 - May 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  

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