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ZXTP2027FTA PDF预览

ZXTP2027FTA

更新时间: 2024-01-14 13:18:33
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
8页 428K
描述
60V, SOT23, PNP medium power transistor

ZXTP2027FTA 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.28最大集电极电流 (IC):4 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):165 MHz
Base Number Matches:1

ZXTP2027FTA 数据手册

 浏览型号ZXTP2027FTA的Datasheet PDF文件第1页浏览型号ZXTP2027FTA的Datasheet PDF文件第2页浏览型号ZXTP2027FTA的Datasheet PDF文件第3页浏览型号ZXTP2027FTA的Datasheet PDF文件第5页浏览型号ZXTP2027FTA的Datasheet PDF文件第6页浏览型号ZXTP2027FTA的Datasheet PDF文件第7页 
ZXTP2027F  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
V
V
V
V
-100 -120  
V
I =-100μA  
C
(BR)CBO  
(BR)CEV  
(BR)CEO  
(BR)EBO  
Collector-emitter breakdown  
voltage  
-100 -120  
V
I =  
1  
μA, 1V> V >-0.3V  
C
BE  
(a)  
Collector-emitter breakdown  
voltage  
-60  
-75  
V
I =-10mA  
C
Emitter-base breakdown  
voltage  
-7.0  
-8.2  
V
I =-100μA  
E
Collector-emitter cut-off  
current  
I
-20  
nA  
V
V
=-80V,  
= 1V  
CEV  
CE  
BE  
Collector-base cut-off current  
Emitter-base cut-off current  
I
I
-20  
-10  
nA  
nA  
V
V
=-80V  
CBO  
CB  
EB  
=-6V  
EBO  
(a)  
(a)  
Static forward current transfer  
ratio  
H
100  
100  
80  
250  
200  
145  
40  
FE  
I =-10mA, V =-2V  
C
CE  
(a)  
300  
I =-2A, V =-2V  
C
CE  
(a)  
Ic=-4A, V =-2V  
CE  
(a)  
20  
Ic=-10A, V =-2V  
CE  
Collector-emitter saturation  
voltage  
V
-15  
-45  
-70  
-25  
-60  
-95  
mV  
mV  
mV  
mV  
CE(SAT)  
I =-100mA, I =-10mA  
C
B
(a)  
(a)  
(a)  
I =-1A, I =-100mA  
C
B
I =-2A, I =-200mA  
C
B
-155 -240  
-0.89 -1.0  
I =-4A, I =-200mA  
C
B
(a)  
Base-Emitter saturation  
voltage  
V
V
V
BE(SAT)  
BE(on)  
I =-4A, I =-200mA  
C B  
(a)  
Base-Emitter turn-on voltage  
-0.81 -0.95  
165  
V
I =-4A, V =-2V  
C
CE  
Transition frequency  
f
MHz Ic=-100mA, V =-10V,  
T
CE  
f=50MHz  
Output capacitance  
Delay timetime  
Rise time  
C
44  
12.6  
10.2  
220  
21  
pF  
ns  
ns  
ns  
ns  
V
V
=-10V, f=1MHz  
obo  
CB  
t
t
t
t
=-10V, I =-2A,  
C
=I =-200mA  
(d)  
CC  
I
B1 B2  
(r)  
Storage time  
Fall time  
(stg)  
(f)  
NOTES:  
(a) Measured under pulsed conditions. Pulse width=300S. Duty cycle Յ2%.  
Issue 3 - May 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com  

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