Datasheet > ZXTP2012A

ZXTP2012A

更新时间： 2023-12-06 20:10:40

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	124K
描述
PNP, 60V, 3.5A, E-Line

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ZXTP2012A 数据手册

ZXTP2012A

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

SYMBOL

PARAMETER

MIN.

-100

-60

TYP. MAX. UNIT CONDITIONS

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-120

-80

I =-100␮A

CBO

CER

CEO

EBO

I =-1␮A, RBՅ1k⍀

I =-10mA*

-7

-8.1

Ͻ1

I =-100␮A

-20

-0.5

-20

␮A

=-80V

CBO

=-80V, T

=100ЊC

amb

Collector cut-off current

Ͻ1

=-80V

CER

RՅ1k⍀

-0.5

-10

=-80V, T

amb

Emitter cut-off current

Ͻ1

-14

-50

=-6V

EBO

Collector-emitter saturation voltage

-20

mV I =-0.1A, I =-10mA*

C B

CE(SAT)

-65

mV I =-1A, I =-100mA*

C B

-80

-115

-210

mV I =-2A, I =-200mA*

C B

-145

mV I =-4A, I =-400mA*

C B

Base-emitter saturation voltage

Base-emitter turn-on voltage

-960 -1060 mV I =-4A, I =-400mA*

C B

BE(SAT)

BE(ON)

-850

250

200

120

-960

mV I =-4A, V =-1V*

C CE

Static forward current transfer ratio

100

I =-10mA, V =-1V*

C CE

300

I =-1A, V =-1V*

I =-4A, V =-1V*

I =-10A, V =-1V*

C CE

Transition frequency

120

MHz I =-100mA, V =-10V

f=50MHz

Output capacitance

Switching times

=-10V, f=1MHz*

OBO

ns I =-1A, V =-10V,

370

=I =-100mA

B1 B2

OFF

* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.

ISSUE 2 - NOVEMBER 2005

SEMICONDUCTORS

1 2 345 6

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