Datasheet > ZXTP2012A

ZXTP2012A

更新时间： 2023-12-06 20:10:40

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	124K
描述
PNP, 60V, 3.5A, E-Line

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ZXTP2012A 数据手册

ZXTP2012A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

LIMIT

-100

-60

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

-7

(a)

Continuous collector current

-3.5

Peak pulse current

-15

(a)

Practical power dissipation at T =25°C

1.0

Linear derating factor

(b)

mW/°C

Power dissipation at T =25°C

0.71

5.7

Linear derating factor

mW/°C

°C

Operating and storage temperature range

T , T

-55 to 150

stg

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

125

UNIT

°C/W

(a)

Junction to ambient

⍜JA

(b)

Junction to ambient

175

NOTES

(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

Collector lead length to solder point 4mm.

(b)For a device mounted in a socket in still air conditions. Collector lead length 10mm.

ISSUE 2 - NOVEMBER 2005

SEMICONDUCTORS

123 4 5 6

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