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ZXTP2012GTC PDF预览

ZXTP2012GTC

更新时间: 2024-01-10 15:23:12
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
6页 124K
描述
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTP2012GTC 数据手册

 浏览型号ZXTP2012GTC的Datasheet PDF文件第2页浏览型号ZXTP2012GTC的Datasheet PDF文件第3页浏览型号ZXTP2012GTC的Datasheet PDF文件第4页浏览型号ZXTP2012GTC的Datasheet PDF文件第5页浏览型号ZXTP2012GTC的Datasheet PDF文件第6页 
ZXTP2012G  
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223  
SUMMARY  
BVCEO = -60V : RSAT = 39m ; IC = -5.5A  
DESCRIPTION  
Packaged in the SOT223 outline this new low saturation 60V PNP transistor  
offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits  
and various driving and power m anagem ent functions.  
FEATURES  
SOT223  
Extrem ely low equivalent on-resistance; RSAT = 39m V at 5A  
5.5 am ps continuous current  
Up to 15 am ps peak current  
Very low saturation voltages  
Excellent gain characteristics specified up to 10 Am ps  
APPLICATIONS  
DC - DC converters  
MOSFET gate drivers  
Charging circuits  
Power switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZXTP2012GTA  
ZXTP2012GTC  
7”  
12m m  
1,000 units  
4,000 units  
em bossed  
13”  
DEVICE MARKING  
ZXTP  
2012  
TOP VIEW  
ISSUE 1 - J UNE 2005  
1
S E M IC O N D U C T O R S  

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