ZXTD6717E6

更新时间： 2024-10-14 07:42:27

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
7页	116K
描述
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS

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ZXTD6717E6 数据手册

ZXTD6717E6

COMPLEMENTARY NPN/ PNP LOW SATURATION DUAL TRANSISTORS

SUMMARY

NPN: V_CEO=15V; V_CE(sat)=0.1V; I_C= 1.5A;

PNP: V_CEO=-12V; V_CE(sat)=-0.175V; I_C= -1.25A;

DESCRIPTION

This new combination device comprises a complementary NPN and PNP low

saturation transistor housed in the SOT23-6 package. Users benefit from very

efficient performance combining a high current operation, exceptionally low

S OT2 3 -6

_CE(sat)and high H_FEresulting in extremely low on state losses. This dual transistor

is ideal for use in a variety of efficient driving functions including motors, lamps,

relays and solenoids and will also benefit circuits requiring high output current switching.

FEATURES

•

Low Saturation Voltage

_CE(sat)values

NPN =135m Ω at 1.5A

PNP =150m Ω at 1.25A

•

h_FEm in 200 at 1A

I_C=1.5A Continuous (NPN), 1.25A (PNP)

SOT23-6 package with P_D= 1.1W

APPLICATIONS

•

Various driving functions

Lam ps

Motors

Relays and solenoids

•

High output current switches

ORDERING INFORMATION

Top View

DEVICE

REEL S IZE

(in ch e s )

TAPE WIDTH

(m m )

QUANTITY

PER REEL

ZXTD6717E6TA

ZXTD6717E6TC

8m m e m b o s s e d

3000 u n its

10000 u n its

DEVICE MARKING

6717

ISSUE 2 - J ULY 2001

12 3 4 5 6 7

中文翻译

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