ZVP0545ASM

更新时间： 2024-02-19 05:01:16

品牌	Logo	应用领域
美台 - DIODES		晶体小信号场效应晶体管开关
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1页	53K
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中文翻译

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数据手册

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ZVP0545ASM 数据手册

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

ZVP0545A

FEATURES

450 Volt V_DS

R_DS(on)=150Ω

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DS

VALUE

UNIT

Drain-Source Voltage

-450

-45

Continuous Drain Current at T_amb=25°C

Pulsed Drain Current

I_D

I_DM

-400

Gate Source Voltage

V_GS

± 20

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

700

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

SYMBOL MIN. MAX. UNIT CONDITIONS.

PARAMETER

Drain-Source Breakdown

Voltage

BV_DSS

-450

I_D=-1mA, V_GS=0V

Gate-Source Threshold

Voltage

V_GS(th)

-1.5

-4.5

ID=-1mA, V_DS= V_GS

Gate-Body Leakage

I_GSS

I_DSS

V_GS=± 20V, V_DS=0V

Zero Gate Voltage Drain

Current

-20

-2

V_DS=-450 V, V_GS=0

V_DS=-360 V, V_GS=0V,

T=125°C(2)

µA

On-State Drain Current(1)

I_D(on)

-100

V_DS=-25 V, V_GS=-10V

V_GS=-10V,I_D=-50mA

Static Drain-Source

On-State Resistance (1)

R_DS(on)

150

Ω

Forward Transconductance

(1)(2)

g_fs

V_DS=-25V,I_D=-50mA

Input Capacitance (2)

C_iss

120

Common Source Output

Capacitance (2)

C_oss

V_DS=-25 V, V_GS=0V, f=1MHz

Reverse Transfer

Capacitance (2)

C_rss

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

t_d(on)

t_r

t_d(off)

t_f

V_DD≈-25V, I_D=-50mA

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

3-413

(

中文翻译

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