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ZVN4525E6 PDF预览

ZVN4525E6

更新时间: 2024-12-01 07:42:43
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 429K
描述
250V N-CHANNEL ENHANCEMENT MODE MOSFET

ZVN4525E6 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.07配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):0.23 A
最大漏源导通电阻:8.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZVN4525E6 数据手册

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ZVN4525E6  
250V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(
DESCRIPTION  
This 250V enhancement mode N-channel MOSFET provides users with a  
competitive specification offering efficient power handling capability, high  
impedance and is free from thermal runaway and thermally induced  
secondary breakdown. Applications benefiting from this device include a  
variety of Telecom and general high voltage circuits.  
SOT23-6  
SOT89 and SOT223 versions are also available.  
FEATURES  
High voltage  
Low on-resistance  
Fast switching speed  
Low gate drive  
Low threshold  
Complementary P-channel Type ZVP4525E6  
SOT23-6 package  
APPLICATIONS  
Earth Recall and dialling switches  
Electronic hook switches  
High Voltage Power MOSFET Drivers  
Telecom call routers  
Top View  
Solid state relays  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm) QUANTITY  
PER REEL  
ZVN4525E6TA  
ZVN4525E6TC  
7
8mm embossed  
8mm embossed  
3000 units  
13  
10000 units  
DEVICE MARKING  
N52  
ISSUE 1 - MARCH 2001  
1

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