Datasheet > ZVNL110A

ZVNL110A

更新时间： 2024-01-17 14:08:58

品牌	Logo	应用领域
捷特科 - ZETEX		/
页数	文件大小	规格书
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描述
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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中文翻译

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数据手册

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ZVNL110A 数据手册

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ZVNL110A

ISSUE 2 – MARCH 94

FEATURES

100 Volt V_DS

R_DS(on)=3Ω

Low threshold voltage

E-Line

TO92 Com patible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_DS

VALUE

UNIT

Dra in -S o u rce Vo ltag e

100

320

Co n tin u o u s Dra in Cu rren t at T_{a m b}=25°C

Pu ls e d Dra in Cu rre n t

I_D

I_DM

Ga te S o u rce Vo lta g e

V_GS

± 20

Po w e r Dis s ip a tio n a t T_{a m b}=25°C

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

P_{to t}

700

°C

T_j:T_{s tg}

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

S YMBOL MIN. MAX. UNIT CONDITIONS .

Dra in -S o u rce Bre akd o w n

Vo lta g e

BV_{DS S}

100

I_D=1m A, V_GS=0V

Ga te-S o u rce Th res h o ld

Vo lta g e

V_{GS (th )}

0.75

1.5

ID=1m A, V_DS= V_GS

Ga te-Bo d y Lea ka g e

I_{GS S}

I_{DS S}

100

n A

V_GS=± 20V, V_DS=0V

Ze ro Ga te Vo lta g e Dra in

Cu rre n t

500

V_DS=100 V, V_GS=0

V_DS=80 V, V_GS=0V, T=125°C

(2)

µA

On -S ta te Dra in Cu rre n t(1)

I_{D(o n )}

750

225

m A

V_DS=25 V, V_GS=5V

V_GS=5V,I_D=250m A

S ta tic Drain -S o u rce On -S ta te

Res is ta n ce (1)

R_{DS (o n )}

4.5

3.0

Ω

V_GS=10V, I_D=500m A

Fo rw a rd Tra n s co n d u ctan ce

(1)(2)

g _fs

m S

V_DS=25V,I_D=500m A

In p u t Ca p a citan ce (2)

C_{is s}

p F

Co m m o n S o u rce Ou tp u t

Cap acita n ce (2)

C_{o s s}

V_DS=25 V, V_GS=0V, f=1MHz

Reve rs e Tra n s fe r Ca p acita n ce C_{rs s}

(2)

p F

Tu rn -On De lay Tim e (2)(3)

Ris e Tim e (2)(3)

t_{d (o n )}

n s

t_r

V_DD≈25V, V_GS=10V, I_D=1A

Tu rn -Off De la y Tim e (2)(3)

Fa ll Tim e (2)(3)

t_{d (o ff)}

t_f

3-400

中文翻译

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