ZVN0540ASM

更新时间： 2024-11-25 13:16:15

品牌	Logo	应用领域
美台 - DIODES		晶体小信号场效应晶体管
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数据手册

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ZVN0540ASM 数据手册

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

ZVN0540A

FEATURES

400 Volt V_DS

R_DS(on)=50Ω

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DS

VALUE

UNIT

Drain-Source Voltage

400

Continuous Drain Current at T_amb=25°C

Pulsed Drain Current

I_D

I_DM

600

Gate-Source Voltage

V_GS

± 20

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

700

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BV_DSS

400

I_D=1mA, V_GS=0V

ID=1mA, V_DS= V_GS

V_GS=± 20V, V_DS=0V

Gate-Source Threshold

Voltage

V_GS(th)

Gate-Body Leakage

I_GSS

I_DSS

Zero Gate Voltage Drain

Current

400

V_DS=400 V, V_GS=0

V_DS=320 V, V_GS=0V,

T=125°C(2)

µA

On-State Drain Current(1)

I_D(on)

150

100

mA V_DS=25 V, V_GS=10V

Static Drain-Source On-State R_DS(on)

Resistance (1)

V_GS=10V,I_D=100mA

Ω

Forward Transconductance(1)(2g_fs

)

V_DS=25V,I_D=100mA

Input Capacitance (2)

C_iss

Common Source Output

Capacitance (2)

C_oss

V_DS=25 V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance C_rss

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

t_d(on)

t_r

t_d(off)

t_f

V_DD≈25V, I_D=100mA

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

3-356

(

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