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ZVN0117 PDF预览

ZVN0117

更新时间: 2024-11-24 23:35:59
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
1页 50K
描述
Obsolete - alternative part: ZVNL120A

ZVN0117 数据手册

  
N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ISSUE 1 – APRIL 94  
ZVN0117TA  
FEATURES  
*
170 Volt BVDS  
APPLICATIONS  
Telephone handsets  
*
D
G
S
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
170  
UNIT  
V
Drain-Source Voltage  
Continuous Drain Current at Tamb=25°C  
Pulsed Drain Current  
ID  
160  
mA  
A
IDM  
2
Gate Source Voltage  
VGS  
V
± 20  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
700  
mW  
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX. UNIT CONDITIONS.  
Drain-Source Breakdown  
Voltage  
BVDSS  
170  
V
ID=10µA, VGS=0V  
Gate-Body Leakage  
IGSS  
IDSS  
100  
nA  
VGS=± 15V, VDS=0V  
Zero Gate Voltage Drain  
Current  
10  
50  
V
DS=170 V, VGS=0  
DS=140 V, VGS=0V,  
T=50°C(2)  
µA  
µA  
V
On-State Drain Current(1)  
ID(on)  
100  
mA VDS=3V, VGS=3.3V  
Static Drain-Source  
On-State Resistance (1)  
RDS(on)  
23  
23  
VGS=3.3V,ID=100mA  
VGS=3V,ID=30mA  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%  
PAGE NO  

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