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ZV931V2TC PDF预览

ZV931V2TC

更新时间: 2024-10-29 10:12:15
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 94K
描述
Variable Capacitance Diode, 7.15pF C(T), 12V, Silicon, Hyperabrupt, SOD-523, 2 PIN

ZV931V2TC 数据手册

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ZC930, ZMV930, ZV931 series  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
MAX.  
12  
UNIT  
V
Reverse voltage  
V
R
Forward current  
I
100  
mA  
mW  
mW  
mW  
ЊC  
F
Power dissipation at T  
Power dissipation at T  
Power dissipation at T  
Junction temperature  
= 25ЊC SOT23  
= 25ЊC SOD323  
= 25ЊC SOD523  
P
P
P
330  
amb  
amb  
amb  
tot  
tot  
tot  
330  
250  
T
125  
j
Storage temperature range  
T
-55 to +150  
ЊC  
stg  
TUNING CHARACTERISTICS at Tamb = 25°C  
PART  
Capacitance  
Capacitance  
V =2.5V  
Capacitance  
Minimum Q  
V =1V  
R
V =4V  
R
V =4V  
R
R
f=50MHz  
MIN. pF  
8.70  
MIN. pF  
4.30  
MAX. pF  
5.50  
MAX. pF  
2.90  
930  
931  
200  
300  
200  
150  
150  
80  
13.50  
17.00  
42.00  
42.00  
95.00  
6.50  
7.80  
4.00  
932  
8.50  
10.50  
27.00  
24.75  
65.00  
5.50  
933  
18.00  
20.25  
40.00  
12.00  
12.00  
25.00  
933A  
934  
ELECTRICAL CHARACTERISTICS at Tamb = 25°C  
PARAMETER  
Reverse breakdown voltage  
Reverse voltage leakage  
CONDITIONS  
= 10uA  
MIN.  
TYP.  
MAX.  
UNIT  
I
12  
V
nA  
R
V
= 8V  
0.2  
100  
400  
R
Temperature coefficient of capacitance  
V
= 3V, f = 1MHz  
300  
ppCm/ЊC  
R
ISSUE 9 - APRIL 2006  
2

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