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ZPD10-B PDF预览

ZPD10-B

更新时间: 2024-11-09 13:16:15
品牌 Logo 应用领域
美台 - DIODES 稳压二极管测试IOT局域网
页数 文件大小 规格书
3页 66K
描述
Zener Diode, 0.5W, Silicon, Unidirectional

ZPD10-B 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.74
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LALF-W2
膝阻抗最大值:70 Ω元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL电压温度Coeff-Max:6.5 mV/ °C
工作测试电流:5 mABase Number Matches:1

ZPD10-B 数据手册

 浏览型号ZPD10-B的Datasheet PDF文件第2页浏览型号ZPD10-B的Datasheet PDF文件第3页 
ZPD1 - ZPD51  
SILICON PLANAR ZENER DIODE  
Features  
·
·
·
Planar Die Construction  
Hermetically Sealed Glass Case  
0.7V - 51V Nominal Zener Voltages  
A
B
A
C
D
Mechanical Data  
·
·
Case: Glass, DO-35  
Leads: Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.13 grams (approx.)  
DO-35  
Min  
25.4  
Dim  
Max  
A
B
C
D
·
·
·
4.57  
0.53  
1.9  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
Zener Current (see Table on Page 2)  
Power Dissipation (Note 2)  
Pd  
500  
mW  
K/W  
°C  
RqJA  
300  
Thermal Resistance, Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +175  
Notes:  
1. Tested with pulses, tp = 20ms.  
2. Valid provided that leads at a distance of 8mm from body are kept at ambient temperature.  
DS21402 Rev. E-3  
1 of 3  
ZPD1-ZPD51  

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