Datasheet > ZP800A200-1000V Y38ZPBINDD

ZP800A200-1000V Y38ZPBINDD

更新时间： 2024-10-14 07:08:07

品牌	Logo	应用领域
柳晶 - LIUJING		可控硅
页数	文件大小	规格书
3页	548K
描述
可控硅、晶闸管

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中文翻译

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数据手册

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ZP800A200-1000V Y38ZPBINDD 数据手册

ZP800A200~1000V

Y38ZPB

国标型普通整流管平板式

(

)

Chinese Type Rectiﬁer Diodes (Capsule Version)

Liujing rectifier co., Ltd.

FEATURES

1). Low forward voltage drop

2). High reverse voltage

3). Hermetic metal cases with ceramic insulators

TYPICAL APPLICATIONS

1). All purpose high power rectiﬁer diodes

I_F(AV)

2065 A

2). High power resistance welding equipment

3). Non-controllable and half-controllable

rectiﬁers

V_RRM

I_FSM

I²t

200~1000 V

18 KA

1620 10³A²S

4). Controlled rectiﬁers

THE MAIN PARAMETERS

VALUE

℃

SYMBOL

TEST CONDITIONS

T_j(

)

UNIT

Min Type Max

℃

T_hs=55

2065

800

180 half sine wave 50Hz

Double side cooled,

I_F(AV)

Mean forward current

190

℃

T_hs=157

V_RRMtp=10ms, V_RSM= V_RRM+100V

V_RM= V_RRM

V_RRM

I_RRM

I_FSM

I²t

Repetitive peak reverse voltage

Repetitive peak current

Surge on-state current

I²T for fusing coordination

Threshold voltage

190

200

1000

10ms half sine wave, V_R=0.6V_RRM

190

1620 A²s*10³

V_FO

r_F

0.81

0.23

1.82

190

Forward slop resistance

Peak on-state voltage

Reverse recovery current

Reverse recovery time

Recovery charge

I_TM=4400A, F=15KN

V_FM

I_rm

I_TM=1500A, tp=1000 s, di/dt=-20A/

t_rr

190

4.2

s,V_R=50V

Q_rr

189

At 180 sine, double side cooled

Thermal resistance

Junction to heatsink

℃

R_th(j-h)

F_m

0.033

Clamping force 15.0KN

Mounting force

Stored temperature

Weight

℃

stg

-40

200

W_t

270

Size

Package box size

95 95 50

www.china-liujing.com

1 / 3

12 3

中文翻译

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