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ZHLA0655

更新时间： 2024-11-05 21:22:03
品牌 Logo 应用领域
尼吉康 - NICHICON 测试二极管
页数 文件大小 规格书
1页 48K
描述
Rectifier Diode, 10 Element, 0.2A, 220V V(RRM), Silicon

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ZHLA0655 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：R-PSIP-T11Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8532.22.00
风险等级：5.92Is Samacsys：N
配置：COMMON ANODE, 10 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.3 V
JESD-30 代码：R-PSIP-T11JESD-609代码：e0
最大非重复峰值正向电流：1 A元件数量：10
端子数量：11最高工作温度：70 °C
最低工作温度：最大输出电流：0.2 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：0.6 W认证状态：Not Qualified
最大重复峰值反向电压：220 V最大反向电流：1 µA
最大反向恢复时间：0.1 µs反向测试电压：110 V
子类别：Other Diodes表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

ZHLA0655 数据手册

  
HYBRID I.C.s "Hi-Net"  
Diode Arrays  
High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's  
standard series. They are combined to be conveniently used for both binary and decimal  
systems. High-speed series is ideal for computer peripherals, control boards and general  
electronic appliances. Besides, high voltage-withstand series is ideal for plasma displays.  
relay surge-preventive circuits.  
Both of these series are in stock for prompt delivery. Any special requirements with customer's  
particular circuits will be also welcome. Please consult us for the details.  
(Samples for the items listed below are not always available on stock. Please contact our sales office for details together with  
your specific requirements.)  
High-speed switching diode array series  
Absolute maximum ratings  
High voltage-withstand series  
Absolute maximum ratings  
Items  
Items  
Symbol  
Ratings  
40V  
Symbol  
VRM  
Ratings  
220V  
Peak reverse voltage  
DC reverse voltage  
VRM  
Peak reverse voltage  
Reverse DC voltage  
VR  
40V  
VR  
200V  
(
)
Surge current 1µs  
I
I
I
FSM  
FM  
0
4.0A  
Surge current (1sec.)  
Peak forward current  
Average rectified current  
Storage temperature  
I
I
I
S
1A  
Peak forward current  
Average rectified current  
Storage temperature  
300mA  
100mA  
FM  
0
600mA  
200mA  
T
stg  
—25  
85°C  
T
stg  
—25  
+ 85  
~
~
+
°C  
100mA for simultaneous energizing.  
Maximum Current value applicable to each diode.  
Maximum Current value applicable to each diode.  
Electrical characteristics  
Electrical characteristics  
Ta : + 25 °C  
Rating  
Ta : + 25  
°C  
Rating  
Typ.  
—
Items  
Symbol  
Conditions  
Unit  
Max.  
1.0 µA  
Items  
Symbol  
Conditions  
Unit  
Min.  
—
Min.  
—
Typ.  
—
Max.  
0.5  
1.0  
1.0  
1.2  
Reverse current  
I
R
V
R
=110V  
=50mA  
=100  
=I =30mA  
=100Ω  
Reverse current  
Forward voltage  
Forward voltage  
Forward voltage  
Reverse recovery time  
I
R
V
R
=40V  
µA  
—
—
Forward voltage  
V
V
F
I
I
I
F
1.3  
—
V
V
V
V
V
F1  
F2  
F3  
I
I
I
F
=10mA  
=50mA  
=100mA  
—
0.7  
0.79  
0.85  
—
V
—
Reverse voltage  
R
R
µA  
220  
F
F
—
V
V
Time required for recovery  
from reverse voltage or current  
F
R
—
t
rr  
100 ns  
—
—
R
L
t
rr  
IF=10mA, VR=6V  
—
4.0 ns  
Series List  
Series List  
No.of  
Pins  
n
No.of  
Pins  
n
Dimensions (m/m Max.)  
Dimensions (m/m Max.)  
Number of  
diodes  
Number of  
Common  
electrode  
Common  
electrode  
Circuit diagram  
1
Code  
Type  
Code  
Type  
Circuit diagram  
diodes  
W
H
T
W
H
T
MA423  
MA424  
MA425  
MA426  
MA427  
MA428  
MA429  
MA430  
MA431  
MA432  
Cathode  
Anode  
ZHLA0650 HD-4K  
ZHLA0651 HD-4A  
ZHLA0652 HD-8K  
ZHLA0653 HD-8A  
ZHLA0654 HD-10K  
ZHLA0655 HD-10A  
ZHLA0656 HD-4S  
Cathode  
Anode  
1
2
1
2
1
2
3
3
ZHMA0423  
ZHMA0424  
ZHMA0425  
ZHMA0426  
ZHMA0427  
ZHMA0428  
ZHMA0429  
ZHMA0430  
ZHMA0431  
ZHMA0432  
1
2
1
2
1
2
3
3
1
2
1
4
8
5
9
9
3.5  
4
14  
9
3
5
9
14  
1
2
3
n
1
2
3
n
Cathode  
Anode  
Cathode  
Anode  
9
9
3.5  
3.5  
8
24  
29  
9
9
3
3
2
24  
29  
2
1
2
3
n
Cathode  
Anode  
Cathode  
Anode  
10  
11  
10  
11  
1
2
3
n
3
5
4
Isolated  
Isolated  
Cathode  
Anode  
10  
8
9
9
3.5  
3.5  
4
5
Isolated 21.5  
Isolated 27  
9
9
3
3
8
27  
n-1  
n
ZHLA0657 HD-5S  
10  
21.5  
3
Drawing  
W
T
6
7
19  
9
3.5  
n
-1  
n
MARKING  
H
0.25  
0.5  
3MIN  
Diode Mini-Arrays  
Height••••••5mm Max.  
1
2
3
n
The mounting height of electronic device can be made  
±
2.54 0.2  
substantially low-profile and compact.  
Thickness••••••2.5mm Max.  
Diode arrays can be placed in a row with 2.54mm  
pitch, and high density mounting is available at a rate  
of one diode per 0.1 sq. inch.  
Electrical characteristics  
Ta: + 25  
°C  
Rating  
Typ.  
—
Items  
Symbol  
Conditions  
Unit  
Min.  
—
Max.  
0.5  
1.0  
1.1  
1.2  
Reverse current  
Forward voltage  
Forward voltage  
Forward voltage  
Reverse recovery time  
I
R
V
R
=35V  
µA  
V
V
V
F1  
F2  
F3  
I
I
I
F
F
F
=10mA  
=50mA  
=100mA  
—
0.75  
0.90  
0.95  
—
V
—
V
V
Circuit diagram  
—
t
rr  
IF  
=
10mA, VR=6V  
—
4.0 ns  
LA1460 (Code ZHLA 1460)  
LA1461 (Code ZHLA 1461)  
MAX.  
W=24.0  
MAX.  
T=2.5  
Drawing  
0.5  
0.25  
2
3
4
5
6
7
8
9
2 3 4 5 6 7 8 9  
1
1
1
2
P
3
4
5
6
7
8
9
Any particular specifications are also available upon request.  
P=2.54±0.2  
CAT.8100P  
1

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