Datasheet > Z1150AM

Z1150AM

更新时间： 2024-11-06 07:07:39

品牌	Logo	应用领域
EIC		稳压二极管
页数	文件大小	规格书
1页	109K
描述
SILICON ZENER DIODES

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中文翻译

获取价格

数据手册

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Z1150AM 数据手册

Certificate : TH97/10561QM

Certificate : TW00/17276EM

SILICON ZENER DIODES

Z1150AM & Z1180AM

M1A

VZ : 150 & 180 Volts

P^D: 1.0 Watts

1.00 (25.4)

0.085(2.16)

MIN.

0.075(1.91)

FEATURES :

* Glass passivated chip

* High peak reverse power dissipation

* High reliability

0.138(3.51)

0.122(3.10)

* Low leakage current

* Pb / RoHS Free

1.00 (25.4)

0.024(0.60)

MIN.

0.022(0.55)

MECHANICAL DATA :

* Case : M1A Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.20 gram (approximately)

MAXIMUM RATINGS

Rating at 25°C ambient temperature unless otherwise specified.

Rating

DC Power Dissipation at T_L= 75 °C (1)

Maximum Forward Voltage at IF = 200 mA

Junction Temperature Range

Symbol

Value

1.0

Unit

P_D

V_F

1.2

T_J

- 55 to + 175

°C

T_STG

Storage Temperature Range

°C

ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Nominal Zener

Voltage ⁽²⁾

Test

Current

I_ZT

Maximum Zener

Impedance

Z_ZK@ I_ZK

Maximum Reverse

Leakage Current

Maximum DC

Zener Current

I_ZM

Type.

V_Z@ I_ZT

Z_ZT@ I_ZT

I_ZK

I_R@ V_R

(V)

(mA)

(Ω)

(mA)

(μA)

(V)

(mA)

150

1.7

1.4

1000

1200

6000

7000

0.25

5.0

114.0

136.8

6.4

5.2

Z1150AM

Z1180AM

180

5.0

Notes :

(1) T_L= Lead temperature at 3/8 " (9.5mm) from body.

(2) The type number listed have a standard tolerance on the nominal zener voltage of ± 5%.

Page 1 of 1

Rev. 00 : March 13, 2007

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