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XRA10AA30SES PDF预览

XRA10AA30SES

更新时间: 2024-10-15 17:01:59
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安伦 - ANAREN /
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2页 475K
描述
Attenuators - SMD

XRA10AA30SES 数据手册

 浏览型号XRA10AA30SES的Datasheet PDF文件第2页 
XRA10AA30SES  
Rev C  
Surface Mount Attenuator  
10 Watts, 30dB  
Description:  
The XRA10AA30SES is a high performance Aluminum Nitride (AlN)  
chip attenuator intended as a cost competitive alternative to Beryllium  
Oxide (BeO). It is designed particularly for LTE and 5G wireless  
communication frequency bands. The high power handling makes the  
part ideal for inter-stage matching, directional couplers, and for use in  
isolators. The attenuator is also RoHS compliant!  
Features:  
RoHS Compliant  
10 Watts  
General Specifications:  
Resistive Element  
Substrate  
Terminal Finish  
Operating Temperature  
Thick film  
AlN Ceramic  
Matte Tin over Nickel Barrier  
-55 to +150°C (see de rating chart)  
Low Cost  
DC – 6.0GHz  
AlN Ceramic  
Non-Nichrome  
Resistive Element  
Electrical Specifications:  
30dB ± 1 .5 dB  
30dB ± 2.0 dB  
DC – 5.0 GHz  
5.0 – 6.0 GHz  
Low VSWR  
Attenuation Value:  
100% Tested  
Power:  
10 Watts  
Frequency Range:  
DC – 6.0GHz  
20dB DC - 5.0GHz  
18dB 5.0 – 6.0GHz  
Input Return Loss:  
Specification based on unit properly installed using suggested mounting instructions  
and a 50 ohm nominal impedance. Specifications subject to change.  
Outline Drawing:  
Tolerance is ±0.010”, unless otherwise specified. Designed to meet or exceed applicable portions of MIL-E-5400. All dimensions in  
inches.  
1

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