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XRA10AA10SES PDF预览

XRA10AA10SES

更新时间: 2024-11-19 17:01:55
品牌 Logo 应用领域
安伦 - ANAREN /
页数 文件大小 规格书
3页 580K
描述
Attenuators - SMD

XRA10AA10SES 数据手册

 浏览型号XRA10AA10SES的Datasheet PDF文件第2页浏览型号XRA10AA10SES的Datasheet PDF文件第3页 
Model XRA10AA10SES  
Rev C  
Surface Mount Attenuator  
10 Watts, 10dB  
The XRA10AA10SES is a high performance Aluminum Nitride (AlN) chip  
attenuator intended as a cost competitive alternative to Beryllium Oxide  
(BeO). It is designed particularly for LTE and 5G wireless communication  
frequency bands. The high power handling makes the part ideal for inter-  
stage matching, directional couplers, and for use in isolators. The attenuator  
is also RoHS compliant!  
General Specifications  
Features:  
Resistive Element  
Substrate  
Thick film  
RoHS Compliant  
10 Watts  
AlN Ceramic  
Terminal Finish  
Operating  
Temperature  
Matte Tin over Nickel Barrier  
Low Cost  
-55 to +150°C (see de rating chart)  
DC – 6.0GHz  
AlN Ceramic  
Tolerance is ±0.010”, unless otherwise specified. Designed to meet or exceed  
applicable portions of MIL-E-5400. All dimensions in inches.  
Electrical Specifications  
Non-Nichrome Resistive  
Attenuation Value:  
Power:  
10dB ± 0.5 dB  
10 Watts  
Element  
Low VSWR  
Frequency Range:  
DC – 6.0GHz  
Input Return Loss:  
20dB  
100% Tested  
Specification based on unit properly installed using suggested mounting instructions  
and a 50 ohm nominal impedance. Specifications subject to change.  
Outline Drawing  
UNLESS OTHERWISE SPECIFIED ALL DIMENSIONS ARE IN INCHES  
1

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