Datasheet > XQFN2043440BD

XQFN2043440BD

更新时间： 2024-11-02 11:01:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	84K
描述
RES,SMT,THIN FILM,34.4 OHMS,100WV,.5% +/-TOL,-250,250PPM TC,0202 CASE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

XQFN2043440BD 数据手册

QFN

Vishay Electro-Films

NiCr Thin Film, Top-Contact Resistor

FEATURES

• Wire bondable

Product may not

be to scale

• Chip size: 0.020 inches square

• Resistance range: 10 Ω to 510 kΩ

• Resistor material: Nichrome

• Quartz substrate: < 0.1 pF shunt capacitance

• Power: 25 mW

The QFN series nichrome on quartz resistor chips offer a

combination of nichrome stability, excellent frequency

response and small size.

The QFNs are manufactured using Vishay Electro-Films

(EFI) sophisticated thin film equipment and manufacturing

technology. The QFNs are 100 % electrically tested and

visually inspected to MIL-STD-883.

APPLICATIONS

Vishay EFI QFN top-contact resistor chips are widely used in hybrid packages where space is limited. Designed with capacity to

handle substantial power loads, they also have the benefit of nichrome stability.

Recommended for hermetic environments where die is not exposed to moisture.

TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES

Tightest Standard Tolerance Available

PROCESS CODE

1 % 0.2 %

0.1 %

CLASS H*

203

CLASS K*

207

ꢀ2 ppmꢁ/C

20 ppmꢁ/C

100 ppmꢁ/C

ꢀ20 ppmꢁ/C

201

205

202

206

200

204

Gold terminations

*MIL-PRF-38534 inspection criteria

1 Ω

10 Ω 30 Ω 100 Ω

ꢀ00 kΩ 360 kΩ 210 kΩ

STANDARD ELECTRICAL SPECIFICATIONS

PARAMETER

Noise, MIL-STD-ꢀ0ꢀ, Method 308

100 Ω - ꢀ20 kΩ

< 100 Ω or > ꢀ21 kΩ

- 35 dB typ.

- 20 dB typ.

Stability, 1000 h, + 1ꢀ2 /C, 20 mW

0.1 % max. ΔR/R

Operating Temperature Range

- 55 °C to + 125 °C

Thermal Shock, MIL-STD-ꢀ0ꢀ,

Method 107, Test Condition F

0.25 % max. ΔR/R

High Temperature Exposure, + 120 /C, 100 h

Dielectric Voltage Breakdown

0.5 % max. ΔR/R

200 V

Insulation Resistance

10¹²min.

Operating Voltage

100 V max.

25 mW

DC Power Rating at + 70 /C (Derated to Zero at + 172 /C)

2 x Rated Power Short-Time Overload, + ꢀ2 /C, 2 s

0.25 % max. ΔR/R

www.vishay.com

For technical questions, contact: efi@vishay.com

Document Number: 61079

Revision: 14-Mar-08

12 3

中文翻译

下载PDF

与XQFN2043440BD相关器件

型号	品牌	获取价格	描述	数据表
XQFN20436001G	VISHAY	获取价格	RES,SMT,THIN FILM,36K OHMS,100WV,2% +/-TOL,-250,250PPM TC,0202 CASE
XQFN20436501F	VISHAY	获取价格	RES,SMT,THIN FILM,36.5K OHMS,100WV,1% +/-TOL,-250,250PPM TC,0202 CASE
XQFN20436502D	VISHAY	获取价格	RES,SMT,THIN FILM,365K OHMS,100WV,.5% +/-TOL,-250,250PPM TC,0202 CASE
XQFN2043650AB	VISHAY	获取价格	RES,SMT,THIN FILM,365 OHMS,100WV,.1% +/-TOL,-250,250PPM TC,0202 CASE
XQFN2043650AC	VISHAY	获取价格	RES,SMT,THIN FILM,365 OHMS,100WV,.2% +/-TOL,-250,250PPM TC,0202 CASE
XQFN2043650AD	VISHAY	获取价格	RES,SMT,THIN FILM,365 OHMS,100WV,.5% +/-TOL,-250,250PPM TC,0202 CASE
XQFN20439000K	VISHAY	获取价格	RES,SMT,THIN FILM,3.9K OHMS,100WV,10% +/-TOL,-250,250PPM TC,0202 CASE
XQFN20443002G	VISHAY	获取价格	RES,SMT,THIN FILM,430K OHMS,100WV,2% +/-TOL,-250,250PPM TC,0202 CASE
XQFN20444200B	VISHAY	获取价格	RES,SMT,THIN FILM,4.42K OHMS,100WV,.1% +/-TOL,-250,250PPM TC,0202 CASE
XQFN20444200C	VISHAY	获取价格	RES,SMT,THIN FILM,4.42K OHMS,100WV,.2% +/-TOL,-250,250PPM TC,0202 CASE

与XQFN2043440BD相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

XQFN2043440BD

XQFN2043440BD 数据手册

与XQFN2043440BD相关器件

与XQFN2043440BD相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

XQFN2043440BD

XQFN2043440BD 数据手册

与XQFN2043440BD相关器件

与XQFN2043440BD相关文章

您还可以找

您在本页遇到什么问题？