Datasheet > XN01871

XN01871

更新时间： 2024-09-29 23:33:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| JFET \| N-CHANNEL \| DUAL \| 30V V(BR)DSS \| TSOP

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中文翻译

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数据手册

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XN01871 数据手册

Composite Transistors

XN01871 (XN1871)

Silicon N-channel junction FET

Unit: mm

For amplification of the low frequency

2.8^+0.2

1.5^+0.25

0.3

0.65 0.15

0.05

0.65 0.15

Features

Two elements incorporated into one package.

(Soure-coupled FETs)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SK0198(2SK198) × 2 elements

0.1 to 0.3

0.4 0.2

Absolute Maximum Ratings (Ta=25˚C)

1 : Gate (Tr1)

2 : Gate (Tr2)

3 : Drain (Tr2)

4 : Source

5 : Drain (Tr1)

EIAJ : SC–74A

Mini Type Pakage (5–pin)

Parameter

Symbol

V_DSX

V_GDO

I_D

Ratings

Unit

Drain to source voltage

Gate to drain voltage

Drain current

–30

Rating

Marking Symbol: 5T

Internal Connection

˚C

element

Gate current

I_G

Total power dissipation

P_T

300

FET 1

Overall Channel temperature

Storage temperature

T_ch

150

T_stg

–55 to +150

˚C

FET 2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_DSS

Conditions

min

typ

max

Unit

Drain current

V_DS= 10V, V_GS= 0

0.5

Gate cutoff current

I_GSS

V_GSC

V_GS= –30V, V_DS= 0

–100

–1.5

Gate to source cutoff voltage

V_DS= 10V, I_D= 10µA

– 0.1

V_DS= 10V, I_D= 0.5mA, f = 1MHz

V_DS= 10V, V_GS= 0V, f = 1MHz

Mutual conductance

Common source short-circuit input capacitance C_iss

Common source reverse transfer capacitance C_rss

3.5

V_DS= 30V, I_D= 1mA, G_V= 80dB

Noise voltage

Rg = 100kΩ, Function = FLAT

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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