Composite Transistors
XN02401 (XN2401)
Silicon PNP epitaxial planar type
Unit: mm
+0.20
–0.05
1.9 0.1
(0.95) (0.95)
2.90
For general amplification
+0.10
–0.06
0.16
3
2
4
5
■ Features
• Two elements incorporated into one package
(Base-coupled transistors)
1
• Reduction of the mounting area and assembly cost by one half
+0.10
–0.05
0.30
10˚
■ Basic Part Number
• 2SB0709A (2SB709A) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−60
Unit
V
1: Collector (Tr1)
2: Collector (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74A
4: Base
5: Emitter (Tr1)
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
−50
V
Mini5-G1 Package
−7
V
Marking Symbol: 7R
Collector current
IC
ICP
PT
−100
−200
300
mA
mA
mW
°C
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Internal Connection
3
Tr2
2
4
5
Tj
150
Tstg
−55 to +150
°C
Tr1
1
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−60
−50
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
hFE ratio *
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
− 0.1
−100
460
µA
µA
ICEO
hFE
160
hFE(Small/ VCE = −10 V, IC = −2 mA
Large)
0.50
0.99
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −100 mA, IB = −10 mA
− 0.3 − 0.5
V
MHz
pF
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
Collector output capacitance
Cob
2.7
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Ratio between 2 elements
*
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00041BED
1