Datasheet > XN01531|XN1531

XN01531|XN1531

更新时间： 2024-09-29 23:33:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	85K
描述
Composite Device - Composite Transistors

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中文翻译

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XN01531|XN1531 数据手册

Composite Transistors

XN01531 (XN1531)

Silicon NPN epitaxial planar type

Unit: mm

+0.20

–0.05

1.9 0.1

(0.95) (0.95)

2.90

+0.10

–0.06

0.16

For high-frequency/oscillation/mixing

■ Features

• Two elements incorporated into one package

(Emitter-coupled transistors)

+0.10

–0.05

0.30

• Reduction of the mounting area and assembly cost by one half

10˚

■ Basic Part Number

• 2SC3130 × 2

■ Absolute Maximum Ratings T_a= 25°C

1: Collector (Tr1)

2: Collector (Tr2)

3: Base (Tr2)

4: Emitter

5: Base (Tr1)

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

EIAJ: SC-74A

Mini5-G1 Package

Marking Symbol: 9F

Collector current

I_C

P_T

T_j

°C

Internal Connection

Total power dissipation

Junction temperature

Storage temperature

200

Tr2

150

T_stg

−55 to +150

Tr1

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

V_EBO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

h_FEratio

I_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 10 V, I_E= 0

V_CE= 10 V, I_B= 0

V_CE= 4 V, I_C= 5 mA

µA



I_CEO

h_FE

200

400

h_FE(SmallV_CE= 4 V, I_C= 5 mA

0.50

0.99



/Large)

∆h_FE

h_FE2: V_CE= 4 V, I_C= 100 µA

h_FE1: V_CE= 4 V, I_C= 5 mA

0.75

1.4

1.60

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 20 mA, I_B= 4 mA

0.5

2.5

1.1

GHz

f_T

V_CB= 4 V, I_E= −5 mA, f = 200 MHz

1.9

0.9

Collector output capacitance

C_ob

V_CB= 4 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Reverse transfer capacitance

(Common base)

C_rb

V_CB= 4 V, I_E= 0, f = 1 MHz

0.25

0.35

Collector-base parameter

r_bb' • C_CV_CB= 4 V, I_E= −5 mA, f = 30 MHz

11.8

13.5

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Ratio between 2 elements

2: ∆h_FE= h_FE2/ h_FE1

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00032BED

12 3

中文翻译

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与XN01531|XN1531相关器件

型号	品牌	获取价格	描述	数据表
XN01558	PANASONIC	获取价格	Silicon NPN epitaxial planar type For low-frequency amplification
XN01558(XN1558)	ETC	获取价格	複合デバイス－複合トランジスタ
XN01558\|XN1558	ETC	获取价格	Composite Device - Composite Transistors
XN01601	PANASONIC	获取价格	Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2
XN01601(XN1601)	ETC	获取价格	Composite Device - Composite Transistors
XN01601\|XN1601	ETC	获取价格	Composite Device - Composite Transistors
XN01601G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
XN01602	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
XN01602G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
XN01871	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| DUAL \| 30V V(BR)DSS \| TSOP

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