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XM1002-BD PDF预览

XM1002-BD

更新时间: 2024-11-14 14:55:11
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
9页 914K
描述
Image Reject Mixer

XM1002-BD 数据手册

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XM1002-BD  
Image Reject Mixer  
34 - 46 GHz  
Rev. V1  
Features  
Chip Device Layout  
Fundamental Image Reject Mixer  
7.0 dB Conversion Loss  
20.0 dB Image Rejection  
+24 dBm Input Third Order Intercept  
100% On-Wafer RF Testing  
100% Visual Inspection to MIL-STD-883 Method  
2010  
RoHS* Compliant and 260°C Reflow Compatible  
Description  
M/A-COM Tech’s 34.0-46.0 GHz GaAs MMIC  
fundamental image reject mixer can be used as an  
up- or down-converter. The device has a conversion  
loss of 7.0 dB with a 20.0 dB image rejection across  
the band. I and Q mixer outputs are provided and an  
external 90 degree hybrid is required to select the  
desired sideband. This MMIC uses M/A-COM Tech’s  
GaAs PHEMT device model technology, and is  
based upon electron beam lithography to ensure  
high repeatability and uniformity. The chip has  
surface passivation to protect and provide a rugged  
part with backside via holes and gold metallization to  
allow either a conductive epoxy or eutectic solder  
die attach process. This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
02-BD  
Absolute Maximum Ratings  
Parameter  
Absolute Max.  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
+0.3 VDC  
+20.0 dBm  
Input Power (IF Pin)  
+20.0 dBm  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
-65 °C to +165 °C  
-55 °C to +125 °C  
Ordering Information  
Part Number  
XM1002-BD-000V  
XM1002-BD-EV1  
Package  
“V” - vacuum release  
gel paks  
evaluation module  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  

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