Datasheet > XLMG3422R030RQZT

XLMG3422R030RQZT

更新时间： 2023-06-19 15:36:08

品牌	Logo	应用领域
德州仪器 - TI		驱动驱动器
页数	文件大小	规格书
45页	1835K
描述
具有集成驱动器、保护和温度报告功能的 600V 30mΩ GaN FET \| RQZ \| 54 \| -40 to 150

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XLMG3422R030RQZT 数据手册

LMG3422R030, LMG3425R030

SNOSDA7C – AUGUST 2020 – REVISED DECEMBER 2021

www.ti.com

7 Specifications

7.1 Absolute Maximum Ratings

Unless otherwise noted: voltages are respect to GND⁽¹⁾

MIN

MAX

600

UNIT

V_DS

Drain-source voltage, FET off

V_DS(surge)Drain-source surge voltage, FET switching, surge condition⁽²⁾

720

V_DS(tr)

Drain-source surge transient ringing peak voltage, FET off, surge condition^{(2) (3)}

800

(surge)

VDD

–0.3

–16

5.5

0.3

LDO5V

VNEG

BBSW

V_VNEG–1 V_VDD+0.5

Pin voltage

–0.3

V_LDO5V+0.

FAULT, OC, TEMP

RDRV

5.5

I_D(RMS)

I_D(pulse)

Drain RMS current, FET on

Internally

Limited

Drain pulsed current, FET on, tp < 10 µs⁽⁴⁾

–120

I_S(pulse)

T_J

Source pulsed current, FET off, tp < 1 µs

Operating junction temperature⁽⁵⁾

Storage temperature

150

–40

–55

°C

T_stg

(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated

under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2) See Section 9.3.3 for an explanation of the switching cycle drain-source voltage ratings.

(3) t1 < 200 ns in Figure 9-1.

(4) The positive pulsed current must remain below the overcurrent threshold to avoid the FET being automatically shut off. The FET drain

intrinsic positive pulsed current rating for t_p< 10 µs is 120 A.

(5) Refer to the Electrical and Switching Characteristics Tables for junction temperature test conditions.

7.2 ESD Ratings

PARAMETER

VALUE

±2000

±500

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002⁽²⁾

V_(ESD)

Electrostatic discharge

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

Unless otherwise noted: voltages are respect to GND, SOURCE connected to GND

MIN

7.5

NOM

MAX

UNIT

VDD

Supply voltage

(Maximum switching frequency derated

for V_VDD< 9 V)

Input voltage

I_D(RMS)

Drain RMS current

Positive source current

LDO5V

kΩ

R_RDRV

C_VNEG

RDRV to GND resistance from external slew-rate control resistor

VNEG to GND capacitance from external bypass capacitor

500

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Product Folder Links: LMG3422R030 LMG3425R030

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与XLMG3422R030RQZT相关器件

型号	品牌	获取价格	描述	数据表
XLMG3422R050RQZT	TI	获取价格	具有集成驱动器、保护和温度报告功能的 600V 50mΩ GaN FET \| RQZ \|
XLMG3526R030RQST	TI	获取价格	具有集成驱动器、保护和零电压检测功能的 650V 30mΩ GaN FET \| RQS \|
XLMG3622REQT	TI	获取价格	具有集成驱动器以及保护和电流检测仿真功能的 650V 120mΩ GaN
XLMG3624REQT	TI	获取价格	具有集成驱动器以及保护和电流检测仿真功能的 650V 170mΩ GaN
XLMG3626REQT	TI	获取价格	具有集成驱动器以及保护和电流检测仿真功能的 650V 270mΩ GaN
XLMH32401QWRGTRQ1	TI	获取价格	汽车类可编程增益差分输出高速跨阻放大器 \| RGT \| 16 \| -40 to 125
XLMH34400IDRLR	TI	获取价格	具有集成钳位和环境光消除功能的 240MHz 单端跨阻放大器 \| DRL \| 6 \| -4
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