Datasheet > XLMG3422R030RQZT

XLMG3422R030RQZT

更新时间： 2023-06-19 15:36:08

品牌	Logo	应用领域
德州仪器 - TI		驱动驱动器
页数	文件大小	规格书
45页	1835K
描述
具有集成驱动器、保护和温度报告功能的 600V 30mΩ GaN FET \| RQZ \| 54 \| -40 to 150

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XLMG3422R030RQZT 数据手册

浏览型号XLMG3422R030RQZT的Datasheet PDF文件第10页

LMG3422R030, LMG3425R030

SNOSDA7C – AUGUST 2020 – REVISED DECEMBER 2021

www.ti.com

7.5 Electrical Characteristics (continued)

Unless otherwise noted: voltage, resistance, capacitance, and inductance are respect to GND; –40℃ ≤ T_J≤ 125℃;

V_DS= 480 V; 9 V ≤ V_VDD≤ 18 V; V_IN= 0 V; RDRV connected to LDO5V; L_BBSW= 4.7 µH

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Peak BBSW sourcing current at high

peak current mode setting

(Peak external buck-boost inductor

current)

0.8

1.2

High peak current mode setting

enable – IN positive-going threshold

frequency

280

420

515

kHz

LDO5V

Output voltage

LDO5V sourcing 25 mA

4.75

5.25

100

Short-circuit current

V_IN,IT+

V_IN,IT–

Positive-going input threshold voltage

Negative-going input threshold voltage

Input threshold hysteresis

1.7

0.7

100

1.9

2.45

1.3

0.9

150

1.3

Input pulldown resistance

V_IN= 2 V

200

kΩ

FAULT, OC, TEMP – OUPUT DRIVE

Low-level output voltage

Output sinking 8 mA

0.16

0.2

0.4

Output sourcing 8 mA, Measured as

V_LDO5V– V_O

High-level output voltage

0.45

VDD, VNEG – UNDER VOLTAGE LOCKOUT

V_VDD,T+

VDD UVLO – positive-going threshold

voltage

6.5

6.1

6.5

7.5

(UVLO)

VDD UVLO – negative-going threshold

voltage

VDD UVLO – Input threshold voltage

hysteresis

510

VNEG UVLO – negative-going

threshold voltage

–13.6

–13.2

–13.0

–12.75

–12.3

–12.1

VNEG UVLO – positive-going threshold

voltage

GATE DRIVER

From V_DS< 320 V to V_DS< 80 V, RDRV

disconnected from LDO5V, R_RDRV= 300

kΩ, T_J= 25℃, V_BUS= 400 V, L_HBcurrent

= 10 A, see Figure 8-1

100

150

V/ns

MHz

From V_DS< 320 V to V_DS< 80 V, T_J=

25℃, V_BUS= 400 V, L_HBcurrent = 10 A,

see Figure 8-1

Turn-on slew rate

From V_DS< 320 V to V_DS< 80 V, RDRV

disconnected from LDO5V, V_RDRV= 0 V,

T_J= 25℃, V_BUS= 400 V, L_HBcurrent = 10

A, see Figure 8-1

V_NEGrising to > –13.25 V, soft-switched,

maximum switching frequency derated for

V_VDD< 9 V

Maximum GaN FET switching

frequency.

2.2

FAULTS

DRAIN overcurrent fault – threshold

current

I_T(OC)

DRAIN short-circuit fault – threshold

current

I_T(SC)

110

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