Datasheet > XLMG3422R030RQZT

XLMG3422R030RQZT

更新时间： 2023-06-19 15:36:08

品牌	Logo	应用领域
德州仪器 - TI		驱动驱动器
页数	文件大小	规格书
45页	1835K
描述
具有集成驱动器、保护和温度报告功能的 600V 30mΩ GaN FET \| RQZ \| 54 \| -40 to 150

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

XLMG3422R030RQZT 数据手册

LMG3422R030, LMG3425R030

SNOSDA7C – AUGUST 2020 – REVISED DECEMBER 2021

www.ti.com

7.3 Recommended Operating Conditions (continued)

Unless otherwise noted: voltages are respect to GND, SOURCE connected to GND

MIN

NOM

MAX

UNIT

L_BBSW

BBSW to GND inductance from external buck-boost inductor

4.7

7.4 Thermal Information

LMG342xR030

THERMAL METRIC⁽¹⁾

RQZ (VQFN)

UNIT

54 PINS

16.6

4.2

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

3.1

Ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

0.12

Ψ_JB

R_θJC(bot)

0.33

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.5 Electrical Characteristics

Unless otherwise noted: voltage, resistance, capacitance, and inductance are respect to GND; –40℃ ≤ T_J≤ 125℃;

V_DS= 480 V; 9 V ≤ V_VDD≤ 18 V; V_IN= 0 V; RDRV connected to LDO5V; L_BBSW= 4.7 µH

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GAN POWER TRANSISTOR

V_IN= 5 V, T_J= 25°C

3.8

mΩ

R_DS(on)

Drain-source on resistance

V_IN= 5 V, T_J= 125°C

I_S= 0.1 A

Third-quadrant mode source-drain

voltage

V_SD

I_S= 20 A

V_DS= 600 V, T_J= 25°C

V_DS= 600 V, T_J= 125°C

V_DS= 400 V

I_DSS

Drain leakage current

Output capacitance

170

C_OSS

C_O(er)

130

230

Energy related effective output

capacitance

276

430

335

Time related effective output

capacitance

V_DS= 0 V to 400 V

C_O(tr)

Q_OSS

Q_RR

Output charge

160

175

Reverse recovery charge

VDD – SUPPLY CURRENTS

VDD quiescent current (LMG3422)

V_VDD= 12 V, V_IN= 0 V or 5V

700

780

1200

1300

VDD quiescent current (LMG3425)

VDD operating current

V_VDD= 12 V, V_IN= 0 V or 5V

V_VDD= 12 V, f_IN= 140 kHz, soft-switching

BUCK BOOST CONVERTER

VNEG output voltage

VNEG sinking 50 mA

–14

0.4

Peak BBSW sourcing current at low

peak current mode setting

(Peak external buck-boost inductor

current)

0.3

0.5

Submit Document Feedback

Product Folder Links: LMG3422R030 LMG3425R030

1...3 4 567 8 9...45

下载PDF

与XLMG3422R030RQZT相关器件

型号	品牌	描述	获取价格	数据表
XLMG3422R050RQZT	TI	具有集成驱动器、保护和温度报告功能的 600V 50mΩ GaN FET \| RQZ \|	获取价格
XLMG3526R030RQST	TI	具有集成驱动器、保护和零电压检测功能的 650V 30mΩ GaN FET \| RQS \|	获取价格
XLMG3622REQT	TI	具有集成驱动器以及保护和电流检测仿真功能的 650V 120mΩ GaN	获取价格
XLMG3624REQT	TI	具有集成驱动器以及保护和电流检测仿真功能的 650V 170mΩ GaN	获取价格
XLMG3626REQT	TI	具有集成驱动器以及保护和电流检测仿真功能的 650V 270mΩ GaN	获取价格
XLMH32401QWRGTRQ1	TI	汽车类可编程增益差分输出高速跨阻放大器 \| RGT \| 16 \| -40 to 125	获取价格