0.5-1.6 GHz GaAs pHEMT
Current Adjustable, Low Noise Amplifier
March 2010 - Rev 23-Mar-10
L1016-DA
Features
Low Noise Figure
NC
NC
Excellent Input Return Loss
Single Voltage Supply 3V ~ 5V
Integrated Active Bias Circuit
RF IN
RF OUT
NC
RF GND
Adjustable Current with an External Resistor 20-80 mA
High Linearity, OIP3 > 32 dBm
Bias
V Bias
NC
Small Package: 2x2mm DFN
General Description
The XL1016-DA is a high dynamic range single stage MMIC LNA with excellent linearity and low noise figure designed for
operation from 0.5 to 1.6 GHz. The LNA is packaged in an RoHs compliant leadless 2x2mm DFN package.This MMIC has an
integrated active bias circuit allowing direct connection to +3.0V voltage supply and minimizing variation over temperature
and process.The bias current and gain can be set with external resistors to allow the user to customize the current and gain
value to fit the application. The XL1016-DA offers less than 0.7 dB noise figure, more than 32 dBm OIP3 and -20 dB input
return loss.The excellent input match, low noise figure and high OIP3 along with the flexibility of setting current and gain
make this LNA ideal for 3G and 4G cellular infrastructure applications. For optimum performance above 1.6 GHz the
XL1019-DA is recommended. The XL1016-DA shares the package type and footprint with the XL1019-DA.
Typical Performance (Vd = 4.0V, Id = 60mA, 25°C) Absolute Maximum Ratings
Supply Voltage (Vd)
+5.5V
Parameter
TYP TYP TYP TYP TYP Units
Current (Id)
Power Dissipation (Pdis)
RF Input Power (Pin)
100 mA
600mW
20 dBm
Frequency (F)
0.7
0.8
0.85
0.9
1.6
GHz
dB
Gain (S21)
21.0 20.4 19.8 19.5 15.1
32.0 32.0 32.0 32.0 32.0
17.5 18.0 18.5 18.5 18.5
-11.0 -19.0 -21.0 -18.8 -10.0
-14.8 -17.0 -17.8 -18.0 -16.0
0.79 0.60 0.56 0.50 0.52
Output IP3 *(OIP3)
Output P1dB (P1dB)
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure (NF)
dBm
dBm
dB
Storage Temperature (Tstg) -55 to +150 ºC
Operating Temperature
Junction Temperature
Thermal Resistance
ESD (HBM)
-40 to +85 ºC
+150 ºC
45 ºC/W
Class 1A
TBD
dB
dB
Typical values presented in the above table were obtained by
measurements using Mimix evaluation board with SMA connecto.rs
*@ Pout = 5 dBm,Tone Spacing = 1 MHz,VBias = 4V, IBias = 9 mA
Moisture Sensitivity Level
Operating this device beyond any of these parameters may
cause permanent damage
Electrical Characteristics (T = 25°C, Vd = 4V, Zo = 50Ω)
Unless otherwise specified, the following specifications are guaranteed at room temperature in a Mimix test fixture.
Parameter
Frequency Range (F)
Voltage
Condition
Units Min Typ
Max
GHz
0.5
1.6
V
4
0.90
Test Frequency
GHz
dB
Small Signal Gain (S21)
17.5 19.5
Output Intercept Point (OIP3) Pout = 5dBm, Tone Spacing = 1MHz dBm
+32.0
Output P1dB
dBm +17.5 +18.5
Total Current (IDQ)
Noise Figure
IDQ = Id + IBias
mA
NF
60.0
0.50
70.0
1.0
A production fixture based on the evaluation board shown on page 2 is used. Vd and Vbias are connected
together to a 4V voltage supply. R3 = 150 ohm and R4 = 240 ohm.
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
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