Datasheet > XL1019-DA-0G0T

XL1019-DA-0G0T

更新时间： 2024-02-28 02:35:03

品牌	Logo	应用领域
MIMIX		射频微波
页数	文件大小	规格书
10页	1240K
描述
Wide Band Low Power Amplifier, 1400MHz Min, 4000MHz Max, 2 X 2 MM, ROHS COMPLIANT, LEADLESS, DFN-8

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XL1019-DA-0G0T 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
其他特性：	TAPE AND REEL	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	16 dB
最大输入功率 (CW)：	20 dBm	JESD-609代码：	e3
最大工作频率：	4000 MHz	最小工作频率：	1400 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND LOW POWER	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

XL1019-DA-0G0T 数据手册

0.5-1.6 GHz GaAs pHEMT

Current Adjustable, Low Noise Amplifier

March 2010 - Rev 23-Mar-10

L1016-DA

Features

Low Noise Figure

Excellent Input Return Loss

Single Voltage Supply 3V ~ 5V

Integrated Active Bias Circuit

RF IN

RF OUT

RF GND

Adjustable Current with an External Resistor 20-80 mA

High Linearity, OIP3 > 32 dBm

Bias

V Bias

Small Package: 2x2mm DFN

General Description

The XL1016-DA is a high dynamic range single stage MMIC LNA with excellent linearity and low noise figure designed for

operation from 0.5 to 1.6 GHz. The LNA is packaged in an RoHs compliant leadless 2x2mm DFN package.This MMIC has an

integrated active bias circuit allowing direct connection to +3.0V voltage supply and minimizing variation over temperature

and process.The bias current and gain can be set with external resistors to allow the user to customize the current and gain

value to fit the application. The XL1016-DA offers less than 0.7 dB noise figure, more than 32 dBm OIP3 and -20 dB input

return loss.The excellent input match, low noise figure and high OIP3 along with the flexibility of setting current and gain

make this LNA ideal for 3G and 4G cellular infrastructure applications. For optimum performance above 1.6 GHz the

XL1019-DA is recommended. The XL1016-DA shares the package type and footprint with the XL1019-DA.

Typical Performance ^{(Vd = 4.0V, Id = 60mA, 25°C)}Absolute Maximum Ratings

Supply Voltage (Vd)

+5.5V

Parameter

TYP TYP TYP TYP TYP Units

Current (Id)

Power Dissipation (Pdis)

RF Input Power (Pin)

100 mA

600mW

20 dBm

Frequency (F)

0.7

0.8

0.85

0.9

1.6

GHz

Gain (S21)

21.0 20.4 19.8 19.5 15.1

32.0 32.0 32.0 32.0 32.0

17.5 18.0 18.5 18.5 18.5

-11.0 -19.0 -21.0 -18.8 -10.0

-14.8 -17.0 -17.8 -18.0 -16.0

0.79 0.60 0.56 0.50 0.52

Output IP3 *(OIP3)

Output P1dB (P1dB)

Input Return Loss (S11)

Output Return Loss (S22)

Noise Figure (NF)

dBm

Storage Temperature (Tstg) -55 to +150 ºC

Operating Temperature

Junction Temperature

Thermal Resistance

ESD (HBM)

-40 to +85 ºC

+150 ºC

45 ºC/W

Class 1A

TBD

Typical values presented in the above table were obtained by

measurements using Mimix evaluation board with SMA connecto.rs

*@ Pout = 5 dBm,Tone Spacing = 1 MHz,VBias = 4V, IBias = 9 mA

Moisture Sensitivity Level

Operating this device beyond any of these parameters may

cause permanent damage

Electrical Characteristics (T = 25°C, Vd = 4V, Zo = 50Ω)

Unless otherwise specified, the following specifications are guaranteed at room temperature in a Mimix test fixture.

Parameter

Frequency Range (F)

Voltage

Condition

Units Min Typ

Max

GHz

0.5

1.6

0.90

Test Frequency

GHz

Small Signal Gain (S21)

17.5 19.5

Output Intercept Point (OIP3) Pout = 5dBm, Tone Spacing = 1MHz dBm

+32.0

Output P1dB

dBm +17.5 +18.5

Total Current (IDQ)

Noise Figure

IDQ = Id + IBias

60.0

0.50

70.0

1.0

A production fixture based on the evaluation board shown on page 2 is used. Vd and Vbias are connected

together to a 4V voltage supply. R3 = 150 ohm and R4 = 240 ohm.

Page 1 of 10

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

12 3 4 5 6 7...10

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