5秒后页面跳转
XC7SET125GW PDF预览

XC7SET125GW

更新时间: 2024-02-08 19:18:34
品牌 Logo 应用领域
安世 - NEXPERIA 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
13页 220K
描述
Bus buffer/line driver; 3-stateProduction

XC7SET125GW 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSSOT包装说明:1.25 MM, PLASTIC, MO-203, SC-88A, SOT353-1, TSSOP-5
针数:5Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.7
系列:AHCT/VHCT/VTJESD-30 代码:R-PDSO-G5
JESD-609代码:e3长度:2.05 mm
逻辑集成电路类型:BUS DRIVER湿度敏感等级:1
位数:1功能数量:1
端口数量:2端子数量:5
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260传播延迟(tpd):9.5 ns
认证状态:Not Qualified座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:TIN端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1.25 mm
Base Number Matches:1

XC7SET125GW 数据手册

 浏览型号XC7SET125GW的Datasheet PDF文件第2页浏览型号XC7SET125GW的Datasheet PDF文件第3页浏览型号XC7SET125GW的Datasheet PDF文件第4页浏览型号XC7SET125GW的Datasheet PDF文件第6页浏览型号XC7SET125GW的Datasheet PDF文件第7页浏览型号XC7SET125GW的Datasheet PDF文件第8页 
Nexperia  
XC7SET125  
Bus buffer/line driver; 3-state  
11. Dynamic characteristics  
Table 8. Dynamic characteristics  
GND = 0 V; For test circuit see Fig. 8.  
Symbol Parameter  
Conditions  
25 °C  
-40 °C to +85 °C -40 °C to +125 °C Unit  
Min Typ [1] Max  
Min  
Max  
Min  
Max  
tpd  
propagation A to Y; see Fig. 6  
[2]  
[2]  
[2]  
[3]  
delay  
VCC = 4.5 V to 5.5 V  
CL = 15 pF  
-
-
3.4  
4.8  
5.5  
7.5  
1.0  
1.0  
6.5  
8.5  
1.0  
1.0  
7.0  
9.5  
ns  
ns  
CL = 50 pF  
ten  
enable time OE to Y; see Fig. 7  
VCC = 4.5 V to 5.5 V  
CL = 15 pF  
CL = 50 pF  
-
-
3.9  
5.1  
5.1  
7.5  
1.0  
1.0  
6.0  
8.5  
1.0  
1.0  
6.5  
9.5  
ns  
ns  
tdis  
disable time OE to Y; see Fig. 7  
VCC = 4.5 V to 5.5 V  
CL = 15 pF  
CL = 50 pF  
-
-
-
4.5  
6.1  
11  
6.8  
8.8  
-
1.0  
1.0  
-
8.0  
10.0  
-
1.0  
1.0  
-
8.5  
11.0  
-
ns  
ns  
pF  
CPD  
power  
dissipation  
per buffer; CL = 50 pF;  
f = 1 MHz;  
capacitance VI = GND to VCC  
[1] Typical values are measured at VCC = 5.0 V.  
[2] tpd is the same as tPLH and tPHL  
ten is the same as tPZL and tPZH  
tdis is the same as tPLZ and tPHZ  
.
.
.
[3] CPD is used to determine the dynamic power dissipation PD (μW).  
PD = CPD × VCC 2 × fi + ∑ (CL × VCC 2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in Volts.  
©
XC7SET125  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
Rev. 4 — 19 January 2022  
5 / 13  
 
 

与XC7SET125GW相关器件

型号 品牌 描述 获取价格 数据表
XC7SET14 NXP High-speed Si-gate CMOS device, an inverting buffer function with Schmitt trigger action

获取价格

XC7SET14GV NXP High-speed Si-gate CMOS device, an inverting buffer function with Schmitt trigger action

获取价格

XC7SET14GV NEXPERIA Inverting Schmitt triggerProduction

获取价格

XC7SET14GW NXP High-speed Si-gate CMOS device, an inverting buffer function with Schmitt trigger action

获取价格

XC7SET14GW NEXPERIA Inverting Schmitt triggerProduction

获取价格

XC7SET32 NXP High-speed Si-gate CMOS device, 2-input OR function

获取价格