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X4C105V20-3A PDF预览

X4C105V20-3A

更新时间: 2024-10-03 15:58:07
品牌 Logo 应用领域
瑞萨 - RENESAS 光电二极管
页数 文件大小 规格书
15页 640K
描述
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20, PLASTIC, TSSOP-20

X4C105V20-3A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:PLASTIC, TSSOP-20
针数:20Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.78可调阈值:NO
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUITJESD-30 代码:R-PDSO-G20
JESD-609代码:e0长度:6.5 mm
湿度敏感等级:1信道数量:1
功能数量:1端子数量:20
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):2.97 V标称供电电压 (Vsup):3.3 V
表面贴装:YES温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:4.4 mm
Base Number Matches:1

X4C105V20-3A 数据手册

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DATASHEET  
X4C105  
FN8124  
Rev 2.00  
July 3, 2008  
4k, NOVRAM/EEPROM CPU Supervisor with NOVRAM and Output Ports  
The low voltage X4C105 combines several functions into  
one device. The first is a 2-wire, 4k-bit serial EEPROM  
memory with write protection. A Write Protect (WP) pin  
provides hardware protection for the upper half of this  
memory against inadvertent writes.  
Features  
• 4k-bit serial EEPROM  
- 400kHz serial interface speed  
- 16-byte page write mode  
• One nibble NOVRAM  
A one nibble NOVRAM is provided and occupies a single  
location. This allows access of 4-bits in a single 150ns cycle.  
This is useful for tracking system operation or process  
status. The NOVRAM memory is completely isolated from  
the serial memory section.  
- 120ns NOVRAM access speed  
- AUTOSTORE  
- Direct/bus access of NOVRAM bits  
• Four output ports  
A low voltage detect circuit activates a RESET pin when VCC  
drops below 3V. This signal also blocks new read or write  
operations and initiates a NOVRAM AUTOSTORE. The  
AUTOSTORE operation is powered by an external capacitor  
to ensure that the value in the NOVRAM is always  
maintained in the event of a power failure.  
• Operates at 3.3V ± 10%  
• Low voltage reset when VCC < 3V  
- 3% accurate thresholds available  
- Output signal shows low voltage condition  
- Activates NOVRAM AUTOSTORE  
- Internal block on EEPROM operation  
The four NOVRAM bits also appear on four separate output  
pins to allow continuous control of external circuitry, such as  
ASICs.  
• Max EEPROM/NOVRAM nonvolatile write cycle: 5ms  
• High reliability  
Intersil EEPROMs are designed and tested for applications  
requiring extended endurance. Inherent data retention is  
greater than 100 years.  
- 1,000,000 endurance cycles  
- Guaranteed data retention: 100 years  
- 20 Ld TSSOP package  
Ordering Information  
PART  
NUMBER  
PART  
MARKING  
VCC LIMITS  
(V)  
VTRIP  
(V)  
TEMP RANGE  
(°C)  
PACKAGE  
20 Ld TSSOP  
20 Ld TSSOP  
X4C105V20  
X4C105V  
X4C105V I  
3.3V ±10%  
2.8 to 2.95  
0 to +70  
X4C105V20I  
-40 to +85  
FN8124 Rev 2.00  
July 3, 2008  
Page 1 of 15  

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