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X4C105V20I PDF预览

X4C105V20I

更新时间: 2024-02-11 19:40:12
品牌 Logo 应用领域
英特矽尔 - INTERSIL 光电二极管监控
页数 文件大小 规格书
19页 295K
描述
CPU Supervisor with NOVRAM and Output Ports

X4C105V20I 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

X4C105V20I 数据手册

 浏览型号X4C105V20I的Datasheet PDF文件第2页浏览型号X4C105V20I的Datasheet PDF文件第3页浏览型号X4C105V20I的Datasheet PDF文件第4页浏览型号X4C105V20I的Datasheet PDF文件第5页浏览型号X4C105V20I的Datasheet PDF文件第6页浏览型号X4C105V20I的Datasheet PDF文件第7页 
X4C105  
®
4K, NOVRAM/EEPROM  
Data Sheet  
March 18, 2005  
FN8124.0  
DESCRIPTION  
CPU Supervisor with NOVRAM and  
Output Ports  
The low voltage X4C105 combines several functions  
into one device. The first is a 2-wire, 4Kbit serial  
EEPROM memory with write protection. A Write Pro-  
tect (WP) pin provides hardware protection for the  
upper half of this memory against inadvertent writes.  
FEATURES  
• 4Kbit serial EEPROM  
—400kHz serial interface speed  
—16-byte page write mode  
• One nibble NOVRAM  
—120ns NOVRAM access speed  
—AUTOSTORE  
A one nibble NOVRAM is provided and occupies a sin-  
gle location. This allows access of 4-bits in a single  
150ns cycle. This is useful for tracking system opera-  
tion or process status. The NOVRAM memory is com-  
pletely isolated from the serial memory section.  
—Direct/bus access of NOVRAM bits  
• Four output ports  
• Operates at 3.3V ± 10%  
A low voltage detect circuit activates a RESET pin  
• Low voltage reset when V < 3V  
when V  
drops below 3V. This signal also blocks  
CC  
CC  
—3% accurate thresholds available  
—Output signal shows low voltage condition  
—Activates NOVRAM AUTOSTORE  
—Internal block on EEPROM operation  
• Max EEPROM/NOVRAM nonvolatile write cycle:  
5ms  
new read or write operations and initiates a NOVRAM  
AUTOSTORE. The AUTOSTORE operation is pow-  
ered by an external capacitor to ensure that the value  
in the NOVRAM is always maintained in the event of a  
power failure.  
The four NOVRAM bits also appear on four separate  
output pins to allow continuous control of external cir-  
cuitry, such as ASICs.  
• High reliability  
—1,000,000 endurance cycles  
—Guaranteed data retention: 100 years  
• 20-lead TSSOP package  
Intersil EEPROMs are designed and tested for appli-  
cations requiring extended endurance. Inherent data  
retention is greater than 100 years.  
BLOCK DIAGRAM  
WP  
Write Control Logic  
O0  
HV Generation  
EEPROM  
Memory  
Output  
Buffers  
and  
Timing and Control  
O1  
O2  
O3  
Latches  
Static RAM  
Memory  
4Kbits  
SCL  
SDA  
S1  
Command  
D0  
D1  
D2  
D3  
Decode  
and  
EEPROM  
Array  
I/O  
Buffers  
Control  
Logic  
S2  
Control  
Logic  
and  
CE  
OE  
WE  
Y Decoder  
Data Register  
Timing  
CAP  
VCC  
VSS  
Low Voltage Detect  
Power-on Reset  
Voltage  
Monitor  
Supply  
RESET  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2005. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  

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