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X4C105V20-3C7889 PDF预览

X4C105V20-3C7889

更新时间： 2024-10-03 19:47:39
品牌 Logo 应用领域
瑞萨 - RENESAS 光电二极管
页数 文件大小 规格书
14页 237K
描述
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20, PLASTIC, TSSOP-20

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X4C105V20-3C7889 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSSOP包装说明：PLASTIC, TSSOP-20
针数：20Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.78可调阈值：NO
模拟集成电路 - 其他类型：POWER SUPPLY SUPPORT CIRCUITJESD-30 代码：R-PDSO-G20
JESD-609代码：e0长度：6.5 mm
湿度敏感等级：1信道数量：1
功能数量：1端子数量：20
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：240认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：2.97 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES温度等级：COMMERCIAL
端子面层：TIN LEAD端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：4.4 mm
Base Number Matches：1

X4C105V20-3C7889 数据手册

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X4C105  
4k, NOVRAM/EEPROM  
®
Data Sheet  
July 3, 2008  
FN8124.2  
CPU Supervisor with NOVRAM and Output  
Ports  
Features  
• 4k-bit serial EEPROM  
The low voltage X4C105 combines several functions into  
one device. The first is a 2-wire, 4k-bit serial EEPROM  
memory with write protection. A Write Protect (WP) pin  
provides hardware protection for the upper half of this  
memory against inadvertent writes.  
- 400kHz serial interface speed  
- 16-byte page write mode  
• One nibble NOVRAM  
- 120ns NOVRAM access speed  
- AUTOSTORE  
A one nibble NOVRAM is provided and occupies a single  
location. This allows access of 4-bits in a single 150ns cycle.  
This is useful for tracking system operation or process  
status. The NOVRAM memory is completely isolated from  
the serial memory section.  
- Direct/bus access of NOVRAM bits  
• Four output ports  
• Operates at 3.3V ± 10%  
• Low voltage reset when VCC < 3V  
- 3% accurate thresholds available  
- Output signal shows low voltage condition  
- Activates NOVRAM AUTOSTORE  
- Internal block on EEPROM operation  
A low voltage detect circuit activates a RESET pin when VCC  
drops below 3V. This signal also blocks new read or write  
operations and initiates a NOVRAM AUTOSTORE. The  
AUTOSTORE operation is powered by an external capacitor  
to ensure that the value in the NOVRAM is always  
maintained in the event of a power failure.  
• Max EEPROM/NOVRAM nonvolatile write cycle: 5ms  
• High reliability  
The four NOVRAM bits also appear on four separate output  
pins to allow continuous control of external circuitry, such as  
ASICs.  
- 1,000,000 endurance cycles  
- Guaranteed data retention: 100 years  
- 20 Ld TSSOP package  
Intersil EEPROMs are designed and tested for applications  
requiring extended endurance. Inherent data retention is  
greater than 100 years.  
Ordering Information  
PART  
NUMBER  
PART  
MARKING  
VCC LIMITS  
(V)  
VTRIP  
(V)  
TEMP RANGE  
(°C)  
PACKAGE  
20 Ld TSSOP  
20 Ld TSSOP  
X4C105V20  
X4C105V20I  
X4C105V  
3.3V ±10%  
2.8 to 2.95  
0 to +70  
X4C105V I  
-40 to +85  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2005, 2008. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
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