Datasheet > X3N161

X3N161

更新时间： 2024-01-23 01:06:25

品牌	Logo	应用领域
CALOGIC		开关晶体管
页数	文件大小	规格书
1页	24K
描述
Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE

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X3N161 技术参数

生命周期：	Obsolete	零件包装代码：	DIE
包装说明：	UNCASED CHIP, X-XXUC-N	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.90.00.00
风险等级：	5.76	外壳连接：	SUBSTRATE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	40 V
最大漏极电流 (Abs) (ID)：	0.125 A	最大漏极电流 (ID)：	0.05 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	4 pF
JESD-30 代码：	X-XXUC-N	元件数量：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	UNSPECIFIED	封装形状：	UNSPECIFIED
封装形式：	UNCASED CHIP	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.36 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	UNSPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

X3N161 数据手册

Diode Protected P-Channel

Enhancement Mode MOSFET

LLC

General Purpose Amplifier/Switch

3N161

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise specified)

Channel Cut Off With Zero Gate Voltage

•

Square-Law Transfer Characteristic Reduces Distortion

Independent Substrate Connection Provides Flexibility

In Biasing

Drain-Source or Drain-Gate Voltage . . . . . . . . . . . . . . . . . 40V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA

Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA

Storage Temperature. . . . . . . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature . . . . . . . . . . . . . . . . . -55^oC to +150^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/^oC

•

Internally Connected Diode Protects Gate From

Damage Due to Overvoltage

•

PIN CONFIGURATION

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TO-72

ORDERING INFORMATION

Part

Package

Temperature Range

3N161

X3N161

Hermetic TO-72

Sorted Chips in Carriers

-55^oC to +150^oC

1507Z

ELECTRICAL CHARACTERISTICS (T_A= 25^oC and V_BS= 0 unless otherwise specified)

SYMBOL

PARAMETER

MIN MAX UNITS

TEST CONDITIONS

_GS= -25V, V_DS= 0

T_A= +100^oC

I_G= -0.1mA, V_DS= 0

_DS= -15V, V_GS= 0

-100

-10

I_GSSF

Forward Gate-Terminal Current

BV_GSS

I_DSS

Forward Gate-Source Breakdown Voltage

Zero-Gate-Voltage Drain Current

-25

-10

-5

µA

V_DS= -25V, V_GS= 0

V_GS(th)

V_GS

Gate-Source Threshold Voltage

VDS = -15V, I_D= -10µA

V_DS= -15V, I_D= -8mA

V_DS= -15V, V_GS= -15V

-1.5

-4.5

Gate-Source Voltage

-8

I_D(on)

On-State Drain Current (Note 2)

-40 -120

| y_fs

| y_os

C_iss

C_rss

Small-Signal Common-Source Forward Transfer Admittance

Small-Signal Common-Source Output Admittance

Common-Source Short-Circuit Input Capacitance (Note 1)

Common-Source Short-Circuit Reverse Transfer Capacitance (Note 1)

3500 6500

f = 1kHz

µS

250

V_DS= -15V,

_D= -8mA

f = 1MHz

NOTES: 1. For design reference only, not 100% tested.

2. Pulse test duration 300µs; duty cycle ≤3%.

CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX

DS016

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