Datasheet > X3N190-91

X3N190-91

更新时间： 2022-11-25 17:30:48

品牌	Logo	应用领域
CALOGIC		放大器
页数	文件大小	规格书
2页	31K
描述
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

X3N190-91 数据手册

Dual P-Channel

Enhancement Mode MOSFET

General Purpose Amplifier

CORPORATION

3N190 / 3N191

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise specified)

Very High Input Impedance

High Gate Breakdown 3N190-3N191

Low Capacitance

•

Drain-Source or Drain-Gate Voltage (Note 1)

•

3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Transient Gate-Source Voltage (Note 1 and 2). . . . . . . ±125V

Gate-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V

Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperature. . . . . . . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature . . . . . . . . . . . . . . . . . -55^oC to +150^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation

PIN CONFIGURATION

One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW

Total Derating above 25^oC. . . . . . . . . . . . . . . . . . 4.2mW/^oC

TO-99

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

2506

Part

Package

Temperature Range

3N190-91 Hermetic TO-99

X3N190-91 Sorted Chips in Carriers

-55^oC to +150^oC

ELECTRICAL CHARACTERISTICS (T_A= 25^oC and V_BS= 0 unless otherwise specified)

3N190/91

SYMBOL

I_GSSR

PARAMETER

Gate Reverse Current

UNITS

TEST CONDITIONS

MIN

MAX

V_GS= 40V

_GS= -40V

-10

-25

I_GSSF

Gate Forward Current

T_A= +125^oC

BV_DSS

BV_SDS

Drain-Source Breakdown Voltage

Source-Drain Breakdown Voltage

I_D= -10µA

-40

I_S= -10µA, V_BD= 0

_DS= -15V, I_D= -10µA

-2.0

-3.0

-5.0

V_GS(th)

Threshold Voltage

V_DS= V_GS, I_D= -10µA

V_DS= -15V, I_D= -500µA

V_DS= -15V

V_GS

Gate Source Voltage

-6.5

I_DSS

Zero Gate Voltage Drain Current

Source Drain Current

-200

-400

300

I_SDS

V_SD= -15V, V_DB= 0

V_DS= -20V, I_D= -100µA

V_DS= -15V, V_GS= -10V

r_DS(on)

I_D(on)

Drain-Source on Resistance

On Drain Current

ohms

-5.0

-30.0

中文翻译

下载PDF

与X3N190-91相关器件

型号	品牌	获取价格	描述	数据表
X3N191	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 2-Element, P-Channel, Silicon, Meta
X3PM-001MPG	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge
X3PM-001MPGR	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge
X3PM-050KPG	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge
X3PM-050KPGR	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge
X3PM-100KPG	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge
X3PM-100KPGR	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge
X3PM-100KPGV	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge
X3PM-100KPGVR	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge
X3PM-100KPGW	FUJIKURA	获取价格	Pre-amplified/3V Excitation/Gauge

与X3N190-91相关文章

压敏电阻器在直流电路中的过压保护应用探讨
2024-06-07

1
电感耐压值及其与电感大小的关系
2024-06-07

4
CNY17F光耦合器：特性、应用、封装、引脚功能及替换型号解析
2024-06-07

3
DS1307资料解析：特性、引脚说明、替代推荐
2024-06-07

2

产品中心

服务支持

精选活动

关于我们

帮助中心

X3N190-91

X3N190-91 数据手册

与X3N190-91相关器件

与X3N190-91相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

X3N190-91

X3N190-91 数据手册

与X3N190-91相关器件

与X3N190-91相关文章

您还可以找

您在本页遇到什么问题？