5秒后页面跳转
X28HT512R-20 PDF预览

X28HT512R-20

更新时间: 2024-01-03 04:30:48
品牌 Logo 应用领域
XICOR 可编程只读存储器
页数 文件大小 规格书
13页 70K
描述
High Temperature, 5 Volt, Byte Alterable E2PROM

X28HT512R-20 数据手册

 浏览型号X28HT512R-20的Datasheet PDF文件第2页浏览型号X28HT512R-20的Datasheet PDF文件第3页浏览型号X28HT512R-20的Datasheet PDF文件第4页浏览型号X28HT512R-20的Datasheet PDF文件第5页浏览型号X28HT512R-20的Datasheet PDF文件第6页浏览型号X28HT512R-20的Datasheet PDF文件第7页 
512K  
X28HT512  
64K x 8 Bit  
High Temperature, 5 Volt, Byte Alterable E2PROM  
FEATURES  
DESCRIPTION  
2
175°C Full Functionality  
The X28HT512 is an 64K x 8 CMOS E PROM, fabri-  
Simple Byte and Page Write  
cated with Xicor’s proprietary, high performance, float-  
ing gate CMOS technology which provides Xicor prod-  
ucts superior high temperature performance character-  
istics. Like all Xicor programmable nonvolatile memo-  
ries the X28HT512 is a 5V only device. The X28HT512  
featurestheJEDECapprovedpinoutforbytewidememo-  
ries, compatible with industry standard EPROMS.  
—Single 5V Supply  
—Self-Timed  
—No Erase Before Write  
—No Complex Programming Algorithms  
—No Overerase Problem  
Highly Reliable Direct Write™ Cell  
—Endurance: 10,000 Write Cycles  
—Data Retention: 100 Years  
—Higher Temperature Functionality is Possible  
by Operating in the Byte Mode  
The X28HT512 supports a 128-byte page write opera-  
tion, effectively providing a 39µs/byte write cycle and  
enabling the entire memory to be written in less than 2.5  
seconds.  
PIN CONFIGURATION  
FLAT PACK  
CERDIP  
SOIC (R)  
PGA  
I/O  
15  
I/O  
17  
I/O  
19  
I/O  
21  
I/O  
22  
V
1
2
3
4
5
6
7
8
9
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
V
0
2
3
5
6
BB  
NC  
CC  
WE  
CE  
24  
A
NC  
A
13  
A
14  
I/O  
16  
V
I/O  
20  
I/O  
23  
15  
12  
1
0
1
SS  
4
7
18  
A
A
14  
A
A
OE  
26  
7
6
5
4
3
2
1
0
0
1
2
A
12  
A
A
25  
13  
2
4
3
10  
11  
11  
A
A
8
A
9
A
A
10  
A
X28HT512  
A
27  
A
28  
5
9
A
A
9
7
11  
X28HT512  
(BOTTOM VIEW)  
A
OE  
A
A
A
29  
A
13  
30  
6
7
8
A
10  
11  
12  
13  
14  
15  
16  
A
8
6
10  
A
CE  
NC  
V
NC  
32  
A
V
36  
NC  
34  
A
A
31  
A
I/O  
7
I/O  
6
I/O  
5
I/0  
4
15  
CC  
12  
14  
5
4
2
I/O  
I/O  
I/O  
V
NC  
NC  
33  
WE  
35  
NC  
BB  
3
1
I/O  
3
SS  
6614 FHD F23  
6614 FHD F02.1  
© Xicor, Inc. 1991, 1995, 1996 Patents Pending  
6614-1.5 8/5/97 T2/C0/D0 EW  
Characteristics subject to change without notice  
1

与X28HT512R-20相关器件

型号 品牌 获取价格 描述 数据表
X28HT512R-25 XICOR

获取价格

High Temperature, 5 Volt, Byte Alterable E2PROM
X28LC512 XICOR

获取价格

3.3 Volt, Byte Alterable E2PROM
X28LC512D-15 XICOR

获取价格

EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32
X28LC512DI-15 XICOR

获取价格

EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32
X28LC512DI-25 XICOR

获取价格

EEPROM, 64KX8, 250ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32
X28LC512J-15 XICOR

获取价格

3.3 Volt, Byte Alterable E2PROM
X28LC512J-15T1 XICOR

获取价格

EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
X28LC512J-20 XICOR

获取价格

3.3 Volt, Byte Alterable E2PROM
X28LC512J-20T1 XICOR

获取价格

EEPROM, 64KX8, 200ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
X28LC512J-25 XICOR

获取价格

3.3 Volt, Byte Alterable E2PROM