X28C010
®
Data Sheet
May 11, 2005
FN8105.0
5 Volt, Byte Alterable EEPROM
Features
• Access time: 120ns
• Simple byte and page write
- Single 5V supply
- No external high voltages or V control
circuits
The Intersil X28C010 is a 128K x 8 EEPROM, fabricated
with Intersil's proprietary, high performance, floating gate
CMOS technology. Like all Intersil programmable non-
volatile memories, the X28C010 is a 5V only device. The
X28C010 features the JEDEC approved pin out for byte-
wide memories, compatible with industry standard
EEPROMs.
PP
- Self-timed
• No erase before write
• No complex programming algorithms
• No overerase problem
The X28C010 supports a 256-byte page write operation,
effectively providing a 19µs/byte write cycle and enabling the
entire memory to be typically written in less than 2.5
seconds. The X28C010 also features DATA Polling and
Toggle Bit Polling, system software support schemes used to
indicate the early completion of a write cycle. In addition, the
X28C010 supports Software Data Protection option.
• Low power CMOS
- Active: 50mA
- Standby: 500µA
• Software data protection
- Protects data against system level inadvertent writes
Intersil EEPROMs are designed and tested for applications
requiring extended endurance. Data retention is specified to
be greater than 100 years.
• High speed page write capability
™
• Highly reliable Direct Write cell
- Endurance: 100,000 write cycles
- Data retention: 100 years
• Early end of write detection
- DATA polling
- Toggle bit polling
Pinouts
EXTENDED LCC
PLCC
LCC
CERDIP
Flat Pack
SOIC (R)
PGA
4
3
2
32 31 30
30
29
I/O
15
I/O
17
I/O
19
I/O
21
I/O
22
1
0
2
3
5
6
4
3
2
32 31
A
NC
1
32
V
A
5
6
7
5
29
A
14
7
A
7
CC
14
1
A
A
6
7
28
27
26
25
24
23
22
21
A
A
8
28
27
26
25
24
23
22
A
A
6
6
13
13
A
2
3
31
30
WE
CE
24
A
13
A
I/O
V
SS
I/O
I/O
A
A
16
1
0
1
4
7
5
5
8
14
16
18
20
23
A
A
A
A
A
8
9
8
9
NC
4
9
4
9
15
X28C010
(Top View)
X28C010
(Top View)
A
A
A
A
11
A
A
A
10
OE
26
3
11
3
2
3
A
4
5
29
28
A
A
10
11
OE
A
A
10
11
OE
12
14
12
11
25
2
2
A
A
A
A
1
10
1
10
A
7
13
A
A
A
A
4
5
11
9
A
12
13
CE
I/O
A
12
13
CE
X28C010
(Bottom View)
0
0
10
9
7
27
28
A
6
6
27
A
8
I/O
I/O
0
I/O
0
15 1617 18 1920
7
7
21
14
A
A
A
A
13
A
7
8
26
25
A
6
7
8
14 15 1617 18 1920
5
9
8
6
29
30
A
4
A
11
X28C010
A
A
NC
NC
V
NC
34
NC
32
A
14
31
12
15
CC
A
9
24
23
OE
3
5
4
2
3
36
TSOP
A
2
10
A
10
A
NC
NC
33
WE
35
16
1
2
3
4
5
6
7
8
40
39
A11
A9
A8
A
11
12
13
14
15
16
22
21
20
19
18
17
CE
1
OE
A10
CE
1
38
37
36
A
0
I/O
7
I/O
I/O7
I/O6
I/O5
I/O4
I/O3
NC
NC
VSS
NC
A13
A14
NC
I/O
0
6
35
34
NC
NC
WE
I/O
I/O
5
I/O
1
33
32
31
9
I/O
2
4
X28C010
10
11
12
13
14
15
16
17
18
19
20
VCC
NC
NC
30
29
28
V
I/O
3
SS
NC
A16
A15
NC
I/O2
I/O1
I/O0
A0
A1
A2
27
26
25
A12
A7
A6
24
23
22
21
A5
A4
A3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright Intersil Americas Inc. 2005. All Rights Reserved
1
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