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X28C010DMB-12 PDF预览

X28C010DMB-12

更新时间: 2024-11-15 20:13:27
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
23页 610K
描述
128KX8 EEPROM 5V, 120ns, CDIP32, CERAMIC, DIP-32

X28C010DMB-12 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.07最长访问时间:120 ns
其他特性:PAGE WRITE命令用户界面:NO
数据轮询:YESJESD-30 代码:R-GDIP-T32
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DIP
封装等效代码:DIP32,.6封装形状:RECTANGULAR
封装形式:IN-LINE页面大小:256 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT APPLICABLE
电源:5 V编程电压:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:5.92 mm最大待机电流:0.0005 A
子类别:EEPROMs最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT APPLICABLE切换位:YES
宽度:15.24 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

X28C010DMB-12 数据手册

 浏览型号X28C010DMB-12的Datasheet PDF文件第2页浏览型号X28C010DMB-12的Datasheet PDF文件第3页浏览型号X28C010DMB-12的Datasheet PDF文件第4页浏览型号X28C010DMB-12的Datasheet PDF文件第5页浏览型号X28C010DMB-12的Datasheet PDF文件第6页浏览型号X28C010DMB-12的Datasheet PDF文件第7页 
X28C010  
®
Data Sheet  
May 11, 2005  
FN8105.0  
5 Volt, Byte Alterable EEPROM  
Features  
• Access time: 120ns  
• Simple byte and page write  
- Single 5V supply  
- No external high voltages or V control  
circuits  
The Intersil X28C010 is a 128K x 8 EEPROM, fabricated  
with Intersil's proprietary, high performance, floating gate  
CMOS technology. Like all Intersil programmable non-  
volatile memories, the X28C010 is a 5V only device. The  
X28C010 features the JEDEC approved pin out for byte-  
wide memories, compatible with industry standard  
EEPROMs.  
PP  
- Self-timed  
• No erase before write  
• No complex programming algorithms  
• No overerase problem  
The X28C010 supports a 256-byte page write operation,  
effectively providing a 19µs/byte write cycle and enabling the  
entire memory to be typically written in less than 2.5  
seconds. The X28C010 also features DATA Polling and  
Toggle Bit Polling, system software support schemes used to  
indicate the early completion of a write cycle. In addition, the  
X28C010 supports Software Data Protection option.  
• Low power CMOS  
- Active: 50mA  
- Standby: 500µA  
• Software data protection  
- Protects data against system level inadvertent writes  
Intersil EEPROMs are designed and tested for applications  
requiring extended endurance. Data retention is specified to  
be greater than 100 years.  
• High speed page write capability  
• Highly reliable Direct Write cell  
- Endurance: 100,000 write cycles  
- Data retention: 100 years  
• Early end of write detection  
- DATA polling  
- Toggle bit polling  
Pinouts  
EXTENDED LCC  
PLCC  
LCC  
CERDIP  
Flat Pack  
SOIC (R)  
PGA  
4
3
2
32 31 30  
30  
29  
I/O  
15  
I/O  
17  
I/O  
19  
I/O  
21  
I/O  
22  
1
0
2
3
5
6
4
3
2
32 31  
A
NC  
1
32  
V
A
5
6
7
5
29  
A
14  
7
A
7
CC  
14  
1
A
A
6
7
28  
27  
26  
25  
24  
23  
22  
21  
A
A
8
28  
27  
26  
25  
24  
23  
22  
A
A
6
6
13  
13  
A
2
3
31  
30  
WE  
CE  
24  
A
13  
A
I/O  
V
SS  
I/O  
I/O  
A
A
16  
1
0
1
4
7
5
5
8
14  
16  
18  
20  
23  
A
A
A
A
A
8
9
8
9
NC  
4
9
4
9
15  
X28C010  
(Top View)  
X28C010  
(Top View)  
A
A
A
A
11  
A
A
A
10  
OE  
26  
3
11  
3
2
3
A
4
5
29  
28  
A
A
10  
11  
OE  
A
A
10  
11  
OE  
12  
14  
12  
11  
25  
2
2
A
A
A
A
1
10  
1
10  
A
7
13  
A
A
A
A
4
5
11  
9
A
12  
13  
CE  
I/O  
A
12  
13  
CE  
X28C010  
(Bottom View)  
0
0
10  
9
7
27  
28  
A
6
6
27  
A
8
I/O  
I/O  
0
I/O  
0
15 1617 18 1920  
7
7
21  
14  
A
A
A
A
13  
A
7
8
26  
25  
A
6
7
8
14 15 1617 18 1920  
5
9
8
6
29  
30  
A
4
A
11  
X28C010  
A
A
NC  
NC  
V
NC  
34  
NC  
32  
A
14  
31  
12  
15  
CC  
A
9
24  
23  
OE  
3
5
4
2
3
36  
TSOP  
A
2
10  
A
10  
A
NC  
NC  
33  
WE  
35  
16  
1
2
3
4
5
6
7
8
40  
39  
A11  
A9  
A8  
A
11  
12  
13  
14  
15  
16  
22  
21  
20  
19  
18  
17  
CE  
1
OE  
A10  
CE  
1
38  
37  
36  
A
0
I/O  
7
I/O  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
NC  
NC  
VSS  
NC  
A13  
A14  
NC  
I/O  
0
6
35  
34  
NC  
NC  
WE  
I/O  
I/O  
5
I/O  
1
33  
32  
31  
9
I/O  
2
4
X28C010  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
VCC  
NC  
NC  
30  
29  
28  
V
I/O  
3
SS  
NC  
A16  
A15  
NC  
I/O2  
I/O1  
I/O0  
A0  
A1  
A2  
27  
26  
25  
A12  
A7  
A6  
24  
23  
22  
21  
A5  
A4  
A3  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2005. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  

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