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X25328S8I-1.8 PDF预览

X25328S8I-1.8

更新时间: 2024-11-29 22:22:31
品牌 Logo 应用领域
XICOR 监控可编程只读存储器
页数 文件大小 规格书
16页 75K
描述
V CC Supervisory Circuit w/Serial E 2 PROM

X25328S8I-1.8 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, SOIC-8Reach Compliance Code:unknown
风险等级:5.92最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:100耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:4096 words字数代码:4000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/3.3 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

X25328S8I-1.8 数据手册

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64K  
32K  
16K  
X25648/49,  
X25328/29,  
X25168/69  
8K x 8 Bit  
4K x 8 Bit  
2K x 8 Bit  
V
Supervisory Circuit w/Serial E2PROM  
CC  
FEATURES  
DESCRIPTION  
• Low Vcc Detection and Reset Assertion  
—Reset Signal Valid to Vcc=1V  
• Save Critical Data With Block LockTM Protection  
—Block LockTM Protect 0, 1/4, 1/2 or all of  
Serial E2PROM Memory Array  
• In Circuit Programmable ROM Mode  
• Long Battery Life With Low Power Consumption  
—<1µA Max Standby Current  
—<5mA Max Active Current during Write  
—<400µA Max Active Current during Read  
• 1.8V to 3.6V, 2.7V to 5.5V and 4.5V to 5.5V Power  
Supply Operation  
• 2MHz Clock Rate  
• Minimize Programming Time  
—32 Byte Page Write Mode  
—Self-Timed Write Cycle  
—5ms Write Cycle Time (Typical)  
• SPI Modes (0,0 & 1,1)  
These devices combines two popular functions, Supply  
Voltage Supervision and Serial E2PROM Memory in one  
package. This combination lowers system cost, reduces  
board space requirements, and increases reliability.  
The user’s system is protected from low voltage condi-  
tions by the devices low Vcc detection circuitry. When  
Vcc falls below the minimum Vcc trip point, the system is  
reset. RESET/RESET is asserted until Vcc returns to  
proper operating levels and stabilizes.  
The memory portion of the device is a CMOS Serial  
E2PROM array with Xicor’s Block LockTM Protection. The  
array is internally organized as x 8.The device features a  
Serial Peripheral Interface (SPI) and software protocol  
allowing operation on a simple four-wire bus.  
The device utilizes Xicor’s proprietary Direct WriteTM cell,  
providing a minimum endurance of 100,000 cycles per  
sector and a minimum data retention of 100 years.  
• Built-in Inadvertent Write Protection  
Power-Up/Power-Down Protection Circuitry  
—Write Enable Latch  
—Write Protect Pin  
• High Reliability  
• Available Packages  
—14-Lead SOIC (X2564X)  
—14-Lead TSSOP (X2532X, X2516X)  
—8-Lead SOIC (X2532X, X2516X)  
BLOCK DIAGRAM  
SI  
DATA  
PAGE DECODE LOGIC  
REGISTER  
SO  
32  
8
COMMAND  
DECODE &  
CONTROL  
LOGIC  
X - DECODE  
LOGIC  
SCK  
CS  
SERIAL  
E2PROM  
ARRAY  
STATUS  
REGISTER  
RESET  
CONTROL  
RESET/RESET  
LOW  
VOLTAGE  
SENSE  
V
CC  
HIGH  
VOLTAGE  
CONTROL  
PROGRAMMING,  
BLOCK LOCK &  
ICP ROM CONTROL  
WP  
7036 FRM 01  
Xicor, Inc. 1994, 1995, 1996 Patents Pending  
7032 -1.1 6/17/97 T1/C0/D0 SH  
Characteristics subject to change without notice  
1

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